The STP50NE10L is a robust N-Channel enhancement-mode power MOSFET designed and manufactured by STMicroelectronics. This semiconductor device is engineered to deliver high-efficiency power conversion in a wide array of electronic applications. With its state-of-the-art technology, the STP50NE10L is a perfect choice for designers looking for a reliable MOSFET with exceptional performance characteristics.

Key Features

• Drain-source Voltage (V<sub>DS): 100V - This high voltage rating allows the MOSFET to handle substantial voltage levels, making it suitable for a range of power applications.
• Continuous Drain Current (I<sub>D): 50A - The device can sustain a high level of continuous current, which is essential for applications requiring robust current handling capabilities.
• R<sub>DS(on): Very low on-resistance - The low on-resistance minimizes power loss due to heating, thereby enhancing the overall efficiency of the device.
• Fast Switching Speed: The MOSFET's rapid switching response improves performance in circuits where switching speed is critical.
• Gate Charge (Q<sub>g): Low - A low gate charge allows for reduced switching energy and faster operation.
• Temperature Range: The device operates effectively over a broad temperature range, ensuring reliability under varying environmental conditions.
• Package: TO-220 - The TO-220 package is widely used and well-known for its good thermal and electrical characteristics.

Applications

The STP50NE10L is versatile and can be used in a variety of applications, including:

• Switch Mode Power Supplies (SMPS)
• DC-DC converters
• Motor Control Systems
• Automotive Applications
• Power Management Functions

Quality and Reliability

STMicroelectronics is committed to providing products that meet the highest standards of quality and reliability. The STP50NE10L MOSFET is no exception, and it is manufactured to ensure performance stability and longevity, even in the most demanding conditions. With its robust design and superior electrical characteristics, the STP50NE10L is a prime choice for engineers and designers looking for a high-performance power MOSFET solution.