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STP4N80K5

Part No STP4N80K5
Manufacturer STMicroelectronics
Catalog FETs - Single
Description Ultra low gate charge | MOSFET N-CH 800V 3A TO-220AB
Sample
Rohs State rohs
ECAD Module
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Categories Discrete Semiconductor Products
Manufacturer STMicroelectronics
Packaging Tube
Transistor Polarity N-Channel
Technology MOSFET
Vds - Drain-Source Breakdown Voltage 800V
Id - Continuous Drain Current 3A
Drive Voltage (Max Rds On, Min Rds On) 10V
Rds On (Maximum) at Id, Vgs 2.5Ohm at 1.5A, 10V
Gate Source Voltage(th) (Maximum) at Id 5V at 100μA
Gate Charge (Qg) (Maximum) at Vgs 10.5nC at 10V
Gate Source Voltage (Maximum) ±30V
Input Capacitance (Ciss) (Maximum) at Vds 175pF at 100V
Power Dissipation (Maximum) 60W
Temperature Range - Operating -55°C ~ 150°C
Mounting Style Through Hole
Supplier Device Package TO-220
Manufacturer Package TO-220-3
Manufacturer Pack Quantity 50
MSL Level 1 (Unlimited)
Win Source Part Number 1261747-STP4N80K5
Manufacturer Homepage www.st.com
Popularity Medium
Supply and Demand Status Limited
Ultra Librarian 3D Model Ultra Librarian STP4N80K5 CAD Model

Description

STP4N80K5 - Power MOSFET by STMicroelectronics

The STP4N80K5 is a robust and high-performance Power MOSFET device designed and manufactured by STMicroelectronics, a global leader in semiconductor solutions. This component is part of the MDmesh™ K5 series, which utilizes innovative technology to offer extremely low on-resistance, high dv/dt capability, and fast switching performance, making it an ideal choice for a wide range of power applications.

The STP4N80K5 operates at an 800V drain-source breakdown voltage (V<sub>DS), which provides a comfortable margin for applications that involve high voltage operations. This characteristic ensures that the device can handle spikes and surges common in industrial and consumer electronic systems without compromising reliability or efficiency.

With a continuous drain current (I<sub>D) of up to 4A and low gate charge (Q<sub>g), this MOSFET is optimized for reduced conduction and switching losses. The low threshold voltage (V<sub>GS(th)) allows for a wide range of drive voltages, accommodating various control strategies and enabling designers to achieve more efficient power conversion in their circuits.

The STP4N80K5 also features a 100% avalanche tested design, which guarantees robustness and longevity in harsh environments. This makes the component suitable for use in applications such as Switch Mode Power Supplies (SMPS), lighting ballasts, welding equipment, and any high-performance power conversion systems.

Enclosed in a TO-220 package, the STP4N80K5 offers excellent thermal performance, ensuring that the device can manage heat effectively even under high power operation. This contributes to the reliability and operational lifespan of the MOSFET, as well as the overall system it is integrated into.

STMicroelectronics has equipped the STP4N80K5 with Zener-protected gate, which provides an additional layer of protection against overvoltage, further enhancing the device's durability and making it a safe choice for sensitive applications.

In summary, the STP4N80K5 from STMicroelectronics is a powerful and reliable Power MOSFET that combines high voltage capability, efficiency, and thermal performance, making it a versatile component for designers looking to improve power management in their electronic designs.

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Pricing & Ordering

Quantity Unit Price Ext. Price
13+ $4.1212 $53.5756
30+ $3.3815 $101.4450
46+ $3.2759 $150.6914
64+ $3.1702 $202.8928
82+ $3.0645 $251.2890
110+ $2.7475 $302.2250
* Prices exclude shipping and taxes. Shipping costs are calculated at checkout.
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Availability: 9 pieces
MOQ: 13 pcs
Order Increment : 1 pcs
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