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Categories Discrete Semiconductor Products
Manufacturer STMicroelectronics
Series MDmesh II
Packaging Reel - TR
Channel Type Type N
Technology MOSFET
Drain Source Voltage 600V
Current - Continuous Drain (Id) @ 25°C 2.7A (Ta), 19A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 10V
Vgs(th) (Maximum) @ Id 5V @ 250μA
Gate Charge (Qg) (Maximum) @ Vgs 60nC @ 10V
Input Capacitance (Ciss) (Maximum) @ Vds 1800pF @ 50V
Vgs (Maximum) ±30V
Power Dissipation (Maximum) 125mW (Ta), 3W (Tc)
Rds On (Maximum) @ Id, Vgs 185 mOhm @ 10A, 10V
Operating Temperature Range 150°C (TJ)
Mounting SMD
Manufacturer Package PowerFlat (8x8) HV
Package 4-PowerFlat HV
Win Source Part Number 1261324-STL26NM60N
Manufacturer Homepage www.st.com
Popularity Medium
Supply and Demand Status Limited
Family Name STL26NM60N
Introduction Date February 14, 2011
ECCN EAR99
Country of Origin China
Halogen Free Compliant
Estimated EOL Date 2029
Ultra Librarian 3D Model Ultra Librarian STL26NM60N CAD Model

Description

STL26NM60N Power MOSFET by STMicroelectronics

The STL26NM60N is a high-performance N-channel Power MOSFET designed and manufactured by STMicroelectronics, a leading name in the semiconductor industry. This device is part of STMicroelectronics' MDmesh™ V series, which is well-known for its excellent energy efficiency and reduced on-resistance. It is particularly suitable for a wide range of high-power applications, including switch-mode power supplies (SMPS), lighting applications, DC-AC converters, and motor control circuits.

With a maximum drain-source voltage (V<sub>DS) of 600V, the STL26NM60N is engineered to handle high voltage operations with ease. The device boasts a low on-resistance (R<sub>DS(on)) of just 0.190 Ω, contributing to its efficiency by minimizing conduction losses. This MOSFET also features a maximum continuous drain current (I<sub>D) of 20A, allowing it to manage significant power throughput without compromising performance.

The STL26NM60N incorporates advanced technology that enhances its switching performance and thermal characteristics. Its fast recovery diode is optimized for high-frequency operations, making it an ideal choice for applications where switching efficiency is crucial. Additionally, the device's Zener-protected gate helps to prevent damage from electrostatic discharges, ensuring long-term reliability and stability in a variety of working conditions.

Encased in a TO-220 package, the STL26NM60N is designed for easy integration into a broad range of electronic circuits. Its through-hole mounting design simplifies the assembly process and provides robust mechanical anchoring, which is particularly important for devices handling high currents and voltages.

For engineers and designers looking for a power MOSFET that offers high efficiency, robust performance, and reliability, the STL26NM60N from STMicroelectronics is an excellent choice. Its combination of high voltage capability, low on-resistance, and fast switching speeds makes it a versatile component for designing energy-efficient power conversion and management solutions.

As with all STMicroelectronics products, the STL26NM60N is supported by comprehensive technical documentation and application notes, making the design-in process as seamless as possible for developers.

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Pricing & Ordering

Quantity Unit Price Ext. Price
26+ $1.9760 $51.3760
62+ $1.6214 $100.5268
96+ $1.5707 $150.7872
132+ $1.5200 $200.6400
171+ $1.4694 $251.2674
228+ $1.3174 $300.3672
* Prices exclude shipping and taxes. Shipping costs are calculated at checkout.
Availability: 19,289 pieces
MOQ: 26 pcs
Order Increment : 1 piece
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