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STL13N60M6

Part No STL13N60M6
Manufacturer STMicroelectronics
Catalog OEM Souring
Description MOSFETs 1 N-Channel
Sample
Rohs State rohs
ECAD Module
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Category OEM Souring
Win Source Part Number 1468671-STL13N60M6
Manufacturer STMicroelectronics
Package Tape & Reel (TR);Cut Tape (CT)
Product Status Active
FET Type N-Channel
Technology MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 600V
Current - Continuous Drain (Id) @ 25°C 7A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 10V
Rds On (Max) @ Id, Vgs 415mOhm @ 3.5A, 10V
Vgs(th) (Max) @ Id 4.75V @ 250µA
Gate Charge (Qg) (Max) @ Vgs 13 nC @ 10 V
Vgs (Max) ±25V
Input Capacitance (Ciss) (Max) @ Vds 509 pF @ 100 V
Power Dissipation (Max) 52W (Tc)
Operating Temperature -55°C ~ 150°C (TJ)
Grade -
Mounting Type Surface Mount
Supplier Device Package PowerFlat™ (5x6) HV
Package / Case 8-PowerVDFN
Ultra Librarian 3D Model Ultra Librarian STL13N60M6 CAD Model

Description

The STL13N60M6 is a high-performance N-Channel MOSFET brought to you by STMicroelectronics, showcasing the company's expertise in power semiconductor technology. This component is built using an advanced superjunction technology, known as MDmesh™ M6, which ensures outstanding efficiency by significantly reducing on-resistance and minimizing switching losses. With a 600V breakdown voltage, it is specially designed for high voltage applications, offering an excellent balance of high efficiency and robustness for power supply, lighting, welding, and other high power-density applications. Its ability to operate at high frequencies with minimal efficiency loss makes it particularly valuable for modern, energy-saving applications. The STL13N60M6 also features a low gate charge, which eases the drive requirements and further enhances its efficiency in switching applications. Encapsulated in a compact package, it provides excellent thermal performance and reliability, meeting the stringent requirements of today's high-performance electronic systems.

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