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STI40N65M2

Part No STI40N65M2
Manufacturer STMicroelectronics
Catalog FETs - Single
Description Extremely low gate charge | MOSFET N-CH 650V 32A I2PAK
Sample
Rohs State rohs
ECAD Module
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Categories Discrete Semiconductor Products
Manufacturer STMicroelectronics
Packaging Tube
Transistor Polarity N-Channel
Technology MOSFET
Vds - Drain-Source Breakdown Voltage 650V
Id - Continuous Drain Current 32A
Drive Voltage (Max Rds On, Min Rds On) 10V
Rds On (Maximum) at Id, Vgs 99mOhm at 16A, 10V
Gate Source Voltage(th) (Maximum) at Id 4V at 250μA
Gate Charge (Qg) (Maximum) at Vgs 56.5nC at 10V
Gate Source Voltage (Maximum) ±25V
Input Capacitance (Ciss) (Maximum) at Vds 2355pF at 100V
Power Dissipation (Maximum) 250W
Temperature Range - Operating 150°C
Mounting Style Through Hole
Supplier Device Package I2PAK
Manufacturer Package TO-262-3 Long Leads, I2Pak, TO-262AA
Manufacturer Pack Quantity 50
MSL Level 1 (Unlimited)
Win Source Part Number 1261098-STI40N65M2
Manufacturer Homepage www.st.com
Popularity Medium
Supply and Demand Status Limited
Ultra Librarian 3D Model Ultra Librarian STI40N65M2 CAD Model

Description

STI40N65M2 - STMicroelectronics N-channel MOSFET

The STI40N65M2 is a high-performance N-channel MOSFET from STMicroelectronics, renowned for its efficiency and reliability in a wide range of power applications. This MOSFET is part of STMicroelectronics' MDmesh™ M2 series, which is designed to offer low on-resistance and low gate charge, making it an ideal choice for high-efficiency solutions.

Key Features

  • Breakdown Voltage: The STI40N65M2 boasts a high drain-source breakdown voltage of 650V, providing a robust barrier against voltage spikes and surges, ensuring stable operation under high voltage conditions.
  • Low On-Resistance: With an on-resistance of just 0.040 ohms, this MOSFET ensures minimal conduction losses, which is critical for high-efficiency power conversion in applications such as switch-mode power supplies and LED lighting.
  • High Current Capability: The device is capable of handling continuous drain currents up to 40A, making it suitable for handling high power densities with ease.
  • Reduced Gate Charge: The optimized gate charge (Qg) allows for faster switching performance, which is essential for reducing switching losses in power conversion systems.
  • 100% Avalanche Tested: Each unit is rigorously tested for avalanche ruggedness, ensuring reliability and longevity even under stressful conditions.
  • Enhanced Body Diode: The MOSFET features a fast recovery body diode, which is particularly beneficial in applications requiring efficient freewheeling or reverse current capability.

Applications

The STI40N65M2 is highly versatile and can be used in a variety of applications, including:

  • Switch Mode Power Supplies (SMPS)
  • High-Performance DC/DC Converters
  • Power Factor Correction Circuits
  • LED Lighting Solutions
  • Welding Equipment
  • Uninterruptible Power Supplies (UPS)
  • Solar Inverters
  • Electric Vehicle Charging Stations

With its combination of high voltage capability, low on-resistance, and fast switching speeds, the STI40N65M2 from STMicroelectronics is an excellent choice for designers seeking to enhance the efficiency and reliability of their power management systems.

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Pricing & Ordering

Quantity Unit Price Ext. Price
13+ $4.6719 $60.7347
31+ $3.8334 $118.8354
47+ $3.7136 $174.5392
65+ $3.5938 $233.5970
84+ $3.4740 $291.8160
112+ $3.1146 $348.8352
* Prices exclude shipping and taxes. Shipping costs are calculated at checkout.
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Availability: 7,100 pieces
MOQ: 5 pcs
Order Increment : 1 pcs
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