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Categories Discrete Semiconductor Products
Manufacturer STMicroelectronics
Series DeepGATE, STripFET VII
Packaging Reel - TR
Channel Type Type N
Technology MOSFET
Drain Source Voltage 100V
Current - Continuous Drain (Id) @ 25°C 110A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 10V
Vgs(th) (Maximum) @ Id 4.5V @ 250μA
Gate Charge (Qg) (Maximum) @ Vgs 117nC @ 10V
Input Capacitance (Ciss) (Maximum) @ Vds 8115pF @ 50V
Vgs (Maximum) ±20V
Power Dissipation (Maximum) 250W (Tc)
Rds On (Maximum) @ Id, Vgs 3.9 mOhm @ 55A, 10V
Operating Temperature Range -55°C ~ 175°C (TJ)
Mounting SMD
Manufacturer Package H2PAK
Package TO-263-3, D2Pak (2 Leads + Tab) Variant
Win Source Part Number 1261066-STH150N10F7-2
Manufacturer Homepage www.st.com
Family Name STH150N10F7-2
ECCN EAR99
Country of Origin China
Halogen Free Not Compliant
Estimated EOL Date 2028
Popularity Medium
Supply and Demand Status Limited
Ultra Librarian 3D Model Ultra Librarian STH150N10F7-2 CAD Model

Description

STH150N10F7-2 Power MOSFET by STMicroelectronics

The STH150N10F7-2 is a high-performance N-channel Power MOSFET produced by STMicroelectronics, a leader in semiconductor solutions. This MOSFET is part of STMicroelectronics' STripFET™ F7 series, which is known for its low on-resistance and low gate charge, making it an excellent choice for high-efficiency power conversion applications.

Key Features

  • Low On-Resistance (R<sub>DS(on)): The STH150N10F7-2 boasts a very low on-state resistance, which translates to reduced conduction losses and improved overall efficiency in power circuits.
  • High Current Capability: With a continuous drain current (I<sub>D) rating of up to 120A, this MOSFET can handle high current loads, making it suitable for demanding applications.
  • 100V Drain-to-Source Breakdown Voltage (V<sub>DSS): The device is designed to support applications that require high voltage operation, ensuring reliability and robustness.
  • Fast Switching Speed: Its fast switching characteristics are ideal for high-frequency power switching applications, which can help in reducing switching losses.
  • Improved Figure of Merit (FOM): The device's low gate charge (Q<sub>g) and on-resistance combination provide an excellent figure of merit, which is critical for achieving high performance in power conversion systems.

Applications

The STH150N10F7-2 is suitable for a wide range of power applications, including:

  • Switch Mode Power Supplies (SMPS)
  • DC/DC converters
  • High-efficiency power management systems
  • Synchronous rectification for server and telecom power supplies
  • Motor control and drives
  • Automotive applications and more

Quality and Reliability

STMicroelectronics is committed to delivering products with the highest standards of quality and reliability. The STH150N10F7-2 is built with this commitment in mind and is designed to meet the stringent requirements of industrial and automotive-grade applications. The device is also RoHS compliant, minimizing the environmental impact and ensuring compatibility with the latest environmental regulations.

Overall, the STH150N10F7-2 Power MOSFET is a versatile and efficient solution for designers looking to improve the performance of their power conversion systems with a reliable and robust component from a trusted manufacturer.

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Pricing & Ordering

Quantity Unit Price Ext. Price
17+ $3.1122 $52.9074
35+ $2.9152 $102.0320
54+ $2.8167 $152.1018
77+ $2.6197 $201.7169
100+ $2.5213 $252.1300
124+ $2.4228 $300.4272
* Prices exclude shipping and taxes. Shipping costs are calculated at checkout.
Availability: 10,000 pieces
MOQ: 17 pcs
Order Increment : 1 piece
*Need More Quantity? *Request a Bulk Quantity Quotation?

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