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STGWA15M120DF3

Part No STGWA15M120DF3
Manufacturer STMicroelectronics
Catalog IGBTs - Single
Description Low thermal resistance | IGBT 1200V 30A 259W
Sample
Rohs State rohs
ECAD Module
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Categories Discrete Semiconductor Products
Manufacturer STMicroelectronics
Packaging Tube
IGBT Type Trench Field Stop
Voltage - Collector Emitter Breakdown (Maximum) 1200V
Current - Collector (Ic) (Maximum) 30A
Current - Collector Pulsed (Icm) 60A
Vce(on) (Maximum) at Vge, Ic 2.3V at 15V, 15A
Maximum Power 259W
Switching Energy 550μJ (on), 850μJ (off)
Input Type Standard
Gate Charge 53nC
Td (on/off) at 25°C 26ns/122ns
Test Condition 600V, 15A, 22Ohm, 15V
Reverse Recovery Time (trr) 270ns
Temperature Range - Operating -55°C ~ 175°C
Mounting Style Through Hole
Manufacturer Package TO-247-3
Supplier Device Package TO-247 Long Leads
Manufacturer Pack Quantity 30
MSL Level 1 (Unlimited)
Win Source Part Number 1261057-STGWA15M120DF3
Manufacturer Homepage www.st.com
Popularity Medium
Supply and Demand Status Limited
Ultra Librarian 3D Model Ultra Librarian STGWA15M120DF3 CAD Model

Description

Introducing the STGWA15M120DF3 Silicon Carbide Power MOSFET by STMicroelectronics

The STGWA15M120DF3 is a state-of-the-art silicon carbide (SiC) power MOSFET brought to you by STMicroelectronics, a global semiconductor leader known for its cutting-edge technology and innovative solutions in electronics. This advanced power MOSFET is designed to meet the demands of high-performance power conversion systems, offering a combination of low on-resistance, high switching speeds, and exceptional thermal performance.

Key Features

  • Breakthrough Efficiency: The STGWA15M120DF3 boasts a low on-resistance of only 120 mΩ, significantly reducing conduction losses and improving overall efficiency in applications.
  • High-Temperature Operation: With a maximum operating temperature of 175°C, this device ensures reliable performance even under extreme conditions, making it suitable for demanding industrial and automotive applications.
  • Robust Design: The MOSFET is engineered to handle high surge currents and features a rugged body diode, providing enhanced reliability and longevity.

Applications

The STGWA15M120DF3 is ideal for a wide range of applications, including but not limited to:

  • Electric vehicle (EV) inverters and chargers
  • Solar inverters and photovoltaic systems
  • Switched-mode power supplies (SMPS)
  • High-performance DC-DC converters
  • Energy storage systems

Performance Advantages

The device's silicon carbide technology provides several performance advantages over traditional silicon-based MOSFETs. These advantages include higher efficiency due to lower switching and conduction losses, reduced cooling requirements due to better thermal performance, and the ability to switch at higher frequencies, which can lead to smaller and lighter systems.

Quality and Reliability

STMicroelectronics is committed to delivering products that meet the highest standards of quality and reliability. The STGWA15M120DF3 is subjected to rigorous testing and quality control measures, ensuring that it meets the stringent requirements of the most critical applications.

By integrating the STGWA15M120DF3 into your power conversion systems, you can expect a significant boost in performance, efficiency, and reliability, all while minimizing energy losses and enhancing the overall system lifespan.

For detailed specifications and application support, visit the STMicroelectronics website or contact their technical support team.

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Pricing & Ordering

Quantity Unit Price Ext. Price
12+ $4.4040 $52.8480
28+ $3.6136 $101.1808
43+ $3.5006 $150.5258
60+ $3.3877 $203.2620
77+ $3.2748 $252.1596
103+ $2.9360 $302.4080
* Prices exclude shipping and taxes. Shipping costs are calculated at checkout.
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Availability: 7,910 pieces
MOQ: 12 pcs
Order Increment : 1 pcs
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