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STGW75H65DFB2-4

Part No STGW75H65DFB2-4
Manufacturer STMicroelectronics
Catalog IGBTs - Single
Description TRENCH GATE FIELD-STOP, 650 V, 7 / IGBT Trench Field Stop 650 V 115 A 357 W Through Hole TO-247-4
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Rohs State rohs
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Category Discrete Semiconductor Products - Transistors - IGBTs - Single IGBTs
Mfr STMicroelectronics
Series HB2
Package Tube
Product Status Active
IGBT Type Trench Field Stop
Voltage - Collector Emitter Breakdown (Max) 650 V
Current - Collector (Ic) (Max) 115 A
Current - Collector Pulsed (Icm) 225 A
Vce(on) (Max) @ Vge, Ic 2V @ 15V, 75A
Power - Max 357 W
Switching Energy 992µJ (on), 766µJ (off)
Input Type Standard
Gate Charge 207 nC
Td (on/off) @ 25°C 22ns/121ns
Test Condition 400V, 75A, 10Ohm, 15V
Reverse Recovery Time (trr) 88 ns
Temperature Range - Operating -55°C ~ 175°C (TJ)
Mounting Type Through Hole
Package / Case TO-247-4
Supplier Device Package TO-247-4
Base Product Number STGW75
MSL Level 1 (Unlimited)
REACH Status REACH Unaffected
ECCN EAR99
HTSUS 8541.29.0095
Win Source Part Number 1353878-STGW75H65DFB2-4
Ultra Librarian 3D Model Ultra Librarian STGW75H65DFB2-4 CAD Model

Description

STGW75H65DFB2-4 - High-Efficiency IGBT from STMicroelectronics

The STGW75H65DFB2-4 is a state-of-the-art IGBT (Insulated Gate Bipolar Transistor) designed and manufactured by STMicroelectronics, a leader in semiconductor solutions. This device is a part of the STPOWER family, which is renowned for its high performance and efficiency in power applications. The STGW75H65DFB2-4 is specifically engineered to meet the demanding needs of modern energy-efficient power conversion systems.

Key Features

  • High Voltage Capability: With a collector-emitter voltage (V<sub>CE) rating of 650V, the STGW75H65DFB2-4 can comfortably handle high voltage applications, making it ideal for use in a wide range of power electronic circuits.
  • High Current Rating: This IGBT can conduct a continuous collector current (I<sub>C) of up to 75A, and a pulsed collector current (I<sub>CM) of 150A, ensuring it can support high power applications.
  • Low On-State Voltage: The device features a low saturation voltage (V<sub>CE(sat)) of typically 1.85V, contributing to reduced conduction losses and improved overall efficiency.
  • Fast Switching Speed: The fast switching characteristics minimize switching losses and enhance performance in high-frequency operations.
  • Co-Packaged Diode: The inclusion of a fast and soft recovery anti-parallel diode ensures efficient switching performance and reduces the need for external components.

Applications

The STGW75H65DFB2-4 is versatile and can be used in a variety of applications, including:

  • Uninterruptible Power Supplies (UPS)
  • Welding equipment
  • Solar inverters
  • Motor drives
  • Power factor correction circuits

Reliability and Robustness

STMicroelectronics ensures that the STGW75H65DFB2-4 meets the highest quality and reliability standards. The device is characterized by its robustness, with features such as a maximum junction temperature (T<sub>J) of 175°C, which allows for stable operation under extreme conditions. Additionally, it is designed to withstand rugged transient conditions, making it a reliable choice for industrial applications.

With its combination of high efficiency, fast switching, and robust design, the STGW75H65DFB2-4 IGBT from STMicroelectronics is an excellent choice for designers looking to improve the performance and reliability of their power conversion systems.

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