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Category Discrete Semiconductor Products>Transistors - IGBTs - Single
Mfr STMicroelectronics
Package Tube
IGBT Type Trench Field Stop
Voltage - Collector Emitter Breakdown (Max) 600 V
Current - Collector (Ic) (Max) 10 A
Current - Collector Pulsed (Icm) 20 A
Vce(on) (Max) @ Vge, Ic 1.95V @ 15V, 5A
Power - Max 88 W
Switching Energy 56µJ (on), 78.5µJ (off)
Input Type Standard
Gate Charge 43 nC
Td (on/off) @ 25°C 30ns/140ns
Test Condition 400V, 5A, 47Ohm, 15V
Reverse Recovery Time (trr) 134.5 ns
Temperature Range - Operating -55°C ~ 175°C (TJ)
Mounting Type Through Hole
Package / Case TO-220-3
Supplier Device Package TO-220
Base Product Number STGP5
MSL Level 1 (Unlimited)
REACH Status REACH Unaffected
ECCN EAR99
HTSUS 8541.29.0095
Other Names 497-16484-5
Standard Package 50
Win Source Part Number 984747-STGP5H60DF
Ultra Librarian 3D Model Ultra Librarian STGP5H60DF CAD Model

Description

STMicroelectronics STGP5H60DF IGBT

The STGP5H60DF from STMicroelectronics is a state-of-the-art IGBT (Insulated Gate Bipolar Transistor) designed for high-efficiency and fast-switching applications. This advanced semiconductor device combines the simple gate-drive characteristics of MOSFETs with the high-current and low-saturation-voltage capability of bipolar transistors by coupling an isolated gate N-channel MOSFET with a PNP bipolar transistor.

This IGBT is part of STMicroelectronics' PowerMESH™ line, which is well known for its outstanding performance in terms of conduction, switching efficiency, and robustness. The STGP5H60DF is specifically engineered to address the demanding needs of a wide range of power applications, including motor drives, uninterruptible power supplies (UPS), inverter welders, and general-purpose inverters.

Key Features

  • Maximum Collector-Emitter Voltage (V<sub>CE): 600V
  • Collector Current (I<sub>C): 5A at 25°C
  • Low On-Voltage Drop (V<sub>CE(sat)) for higher efficiency and reduced heat generation
  • High-Speed Switching with minimal tail current
  • High-Frequency Operation up to 30 kHz
  • Co-packaged with a fast recovery anti-parallel diode
  • Short-Circuit-Rated for enhanced reliability
  • Optimized for minimal total conduction and switching losses
  • Junction temperature range from -40°C to 175°C

The device comes in a TO-220 package, which is widely used and suitable for through-hole mounting, ensuring ease of integration into various circuit designs. The package is designed to handle high heat dissipation, which is critical for maintaining the reliability and longevity of the IGBT under high-power conditions.

STMicroelectronics has equipped the STGP5H60DF with advanced technological features to ensure that it not only meets but exceeds the performance requirements for efficient and reliable power management solutions. With its robust design and superior electrical characteristics, the STGP5H60DF is an excellent choice for designers looking to enhance the performance of their power conversion systems.

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Pricing & Ordering

Quantity Unit Price Ext. Price
30+ $1.9028 $57.0840
65+ $1.5613 $101.4845
100+ $1.5125 $151.2500
140+ $1.4637 $204.9180
180+ $1.4149 $254.6820
240+ $1.2685 $304.4400
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Availability: 1,457 pieces
MOQ: 30 pcs
Order Increment : 1 piece
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