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Category Discrete Semiconductor Products>Transistors - IGBTs - Single
Mfr STMicroelectronics
Package Tube
Product Status Obsolete
IGBT Type Trench Field Stop
Voltage - Collector Emitter Breakdown (Max) 600 V
Current - Collector (Ic) (Max) 40 A
Current - Collector Pulsed (Icm) 80 A
Vce(on) (Max) @ Vge, Ic 2.2V @ 15V, 20A
Power - Max 52 W
Switching Energy 200µJ (on), 130µJ (off)
Input Type Standard
Gate Charge 116 nC
Td (on/off) @ 25°C 38ns/149ns
Test Condition 400V, 20A, 15V
Temperature Range - Operating -55°C ~ 175°C (TJ)
Mounting Type Through Hole
Package / Case TO-3P-3 Full Pack
Supplier Device Package TO-3PF
Base Product Number STGFW20
Other Names -497-13954-5,497-13954-5,STGFW20V60F
Standard Package 30
MSL Level 1 (Unlimited)
REACH Status REACH Unaffected
ECCN EAR99
HTSUS 8541.29.0095
Win Source Part Number 1277382-STGFW20V60F
Ultra Librarian 3D Model Ultra Librarian STGFW20V60F CAD Model

Description

STGFW20V60F - STMicroelectronics Field Stop Trench IGBT

The STGFW20V60F is a high-performance Field Stop Trench IGBT (Insulated Gate Bipolar Transistor) produced by STMicroelectronics, a global semiconductor leader. This IGBT is designed to offer a superior combination of fast switching, low on-state voltage, and high thermal performance. It is well-suited for a wide range of high-efficiency applications such as power conversion, motor drives, and renewable energy systems.

With a maximum collector-emitter voltage of 600V and a continuous collector current rating of 40A at 25°C, the STGFW20V60F is capable of handling significant power levels. The device also features a low on-state voltage drop, which helps to minimize conduction losses and improve overall system efficiency.

The STGFW20V60F incorporates the latest Field Stop Trench technology, which provides a fine balance between switching speed and saturation voltage. This technology reduces the turn-off energy (Eoff) and allows for faster switching frequencies, which is essential for reducing the size and weight of the passive components in a power electronic circuit.

Thermal management is a critical aspect of any power device, and the STGFW20V60F excels in this area. It comes in a fully isolated TO-3P package, which not only ensures a high level of electrical isolation but also offers excellent heat dissipation characteristics. This package allows for a simplified heatsink design and a reduction in overall system cost.

The device also features a very tight parameter distribution, which results in simplified circuit designs and higher reliability in operation. Additionally, it is characterized by a positive temperature coefficient, making it easier to handle in parallel configurations.

In summary, the STGFW20V60F from STMicroelectronics is a robust and efficient IGBT that is designed to meet the demanding requirements of modern power electronic systems. Its advanced technology and thermal performance make it an excellent choice for designers looking to optimize their applications for efficiency and reliability.

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