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STGD3HF60HDT4

Part No STGD3HF60HDT4
Manufacturer STMicroelectronics
Catalog IGBTs - Single
Description 4.5 A, 600 V very fast IGBT with Ultrafast diode | IGBT 600V 7.5A 38W DPAK
Sample
Rohs State rohs
ECAD Module
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Categories Discrete Semiconductor Products
Manufacturer STMicroelectronics
Packaging Reel
Voltage - Collector Emitter Breakdown (Maximum) 600V
Current - Collector (Ic) (Maximum) 7.5A
Current - Collector Pulsed (Icm) 18A
Vce(on) (Maximum) at Vge, Ic 2.95V at 15V, 1.5A
Maximum Power 38W
Switching Energy 19μJ (on), 12μJ (off)
Input Type Standard
Gate Charge 12nC
Td (on/off) at 25°C 11ns/60ns
Test Condition 400V, 1.5A, 100Ohm, 15V
Reverse Recovery Time (trr) 85ns
Temperature Range - Operating -55°C ~ 150°C
Mounting Style SMD
Manufacturer Package TO-252-3, DPak (2 Leads + Tab), SC-63
Supplier Device Package DPAK
Family Part Number STG*3HF
Manufacturer Pack Quantity 1
MSL Level 1 (Unlimited)
Win Source Part Number 1261017-STGD3HF60HDT4
Manufacturer Homepage www.st.com
Popularity Medium
Supply and Demand Status Limited
Ultra Librarian 3D Model Ultra Librarian STGD3HF60HDT4 CAD Model

Description

STGD3HF60HDT4 - IGBT from STMicroelectronics

The STGD3HF60HDT4 is an advanced IGBT (Insulated Gate Bipolar Transistor) produced by the renowned semiconductor manufacturer, STMicroelectronics. This high-speed IGBT is designed to offer an excellent balance of switching performance and robustness, making it an ideal choice for a wide range of high-efficiency applications.

Utilizing STMicroelectronics' proprietary trench gate field-stop technology, the STGD3HF60HDT4 achieves outstanding performance in terms of both conduction and switching losses. This technology ensures that the device can handle high current densities while maintaining a low saturation voltage, leading to reduced power dissipation and improved overall efficiency in power conversion systems.

With a maximum collector-emitter voltage (V<sub>CE) of 600V and a collector current rating of up to 15A, this IGBT is well-suited for applications such as motor drives, power inverters, and power factor correction circuits. Its fast switching characteristics also make it a good fit for high-frequency operations, contributing to smaller and more efficient designs by enabling the use of smaller passive components.

The STGD3HF60HDT4 comes in a surface-mount DPAK (TO-252) package, which is highly favored for its compact footprint and excellent thermal performance. This packaging allows for efficient heat dissipation, ensuring the device operates reliably even under high-power conditions. Additionally, the device is characterized by a low gate charge and minimal internal capacitances, which further enhance its switching performance.

Safety and reliability are also key features of this IGBT. It includes a built-in diode for free-wheeling applications, which helps to protect against reverse voltage spikes. Moreover, the device is designed to withstand rugged transient conditions and offers a high level of short-circuit ruggedness, making it a dependable component in critical power applications.

In summary, the STGD3HF60HDT4 from STMicroelectronics represents a high-performance IGBT solution that combines state-of-the-art technology with practical design considerations, ensuring both efficiency and reliability in a variety of power electronic systems.

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Pricing & Ordering

Quantity Unit Price Ext. Price
45+ $1.1142 $50.1390
110+ $0.9143 $100.5730
170+ $0.8857 $150.5690
235+ $0.8571 $201.4185
305+ $0.8286 $252.7230
405+ $0.7428 $300.8340
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Availability: 20,000 pieces
MOQ: 45 pcs
Order Increment : 1 pcs
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