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STGB20NB41LZT4

Part No STGB20NB41LZT4
Manufacturer STMicroelectronics
Catalog IGBTs - Single
Description IGBT 442V 40A 200W D2PAK
Datasheet
Sample
Rohs State rohs
ECAD Module
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Categories Discrete Semiconductor Products
Manufacturer STMicroelectronics
Packaging Reel - TR
Status Active
VCEO Maximum Collector-Emitter Breakdown Voltage 442V
Maximum Current Collector 40A
Pulsed Collector Current 80A
Collector-emitter saturation voltage(Max) 2V @ 4.5V, 20A
Maximum Power Dissipation 200W
Total Switching Energy(Ets) 5mJ (on), 12.9mJ (off)
Input Type Standard
Gate Charge 46nC
Turn-on and Turn-off delay time 1μs/12.1μs
Testing Conditions 320V, 20A, 1 kOhm, 5V
Temperature Range - Operating -55°C to 175°C (TJ)
Mounting SMD (SMT)
Case / Package D2PAK
Win Source Part Number 031194-STGB20NB41LZT4
Is this a common-used part? Yes
Popularity High
Supply and Demand Status Balance
Family Name STGB20NB41LZ
Introduction Date October 01, 2003
ECCN EAR99
Country of Origin China
Halogen Free Not Compliant
Estimated EOL Date 2024
Ultra Librarian 3D Model Ultra Librarian STGB20NB41LZT4 CAD Model

Description

STGB20NB41LZT4 - IGBT Transistor from STMicroelectronics

The STGB20NB41LZT4 is a cutting-edge Insulated Gate Bipolar Transistor (IGBT) developed by STMicroelectronics, a leader in semiconductor solutions. This IGBT is designed to offer a high level of performance for a wide range of power electronics applications. Its advanced features make it suitable for applications such as motor drives, uninterruptible power supplies (UPS), inverter circuits, and general-purpose power amplification and switching.

With a maximum collector-emitter voltage (V<sub>CE) of 410 V and a collector current rating of 40 A, the STGB20NB41LZT4 is capable of handling high power levels. The device is optimized for low conduction losses and has a low on-state voltage (V<sub>CE(sat)) typically at 2.3 V, which contributes to its high efficiency. This IGBT also features a fast-switching speed, which is critical for reducing switching losses and improving the overall performance of power electronic systems.

The STGB20NB41LZT4 is housed in a D2PAK (TO-263) surface-mount package, which is known for its excellent thermal performance and compact footprint. This package allows for efficient heat dissipation and is suitable for space-constrained applications. Moreover, the device is characterized by a robust and rugged design, providing reliable operation even under harsh conditions.

One of the key advantages of this IGBT is its co-packaged freewheeling diode, which offers fast recovery characteristics. This feature simplifies the design process, as it reduces the number of components required in the circuit and enhances the overall system reliability.

STMicroelectronics has also taken measures to ensure that the STGB20NB41LZT4 meets the highest quality and reliability standards. The device is compliant with RoHS and is lead-free, making it an environmentally friendly choice for manufacturers looking to create sustainable products.

In summary, the STGB20NB41LZT4 from STMicroelectronics is an excellent choice for designers seeking a high-performance IGBT with fast switching, low losses, and a reliable package. Its integrated features and robust design make it an ideal component for a broad range of power applications.

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Pricing & Ordering

Quantity Unit Price Ext. Price
14+ $3.6624 $51.2736
34+ $3.0051 $102.1734
52+ $2.9112 $151.3824
71+ $2.8173 $200.0283
92+ $2.7233 $250.5436
123+ $2.4416 $300.3168
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Availability: 10,000 pieces
MOQ: 14 pcs
Order Increment : 1 pcs
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