Product Overview: STD3N62K3-1
The STD3N62K3-1 is a high-performance N-channel Power MOSFET from STMicroelectronics, designed to deliver efficiency and reliability for a wide range of applications. This device is a part of STMicroelectronics' STripFET™ III technology, which ensures an optimal trade-off between on-state resistance (R<sub>DS(on)) and gate charge (Q<sub>g), leading to high efficiency in power conversion.
With a drain-source voltage (V<sub>DS) of 620V, the STD3N62K3-1 is suitable for high voltage applications. It is capable of handling continuous drain currents (I<sub>D) up to 3A, making it a robust option for various power management tasks. The device also features a low threshold voltage (V<sub>GS(th)), which allows for ease of drive and lower switching losses.
Key Features
Specifications
Drain-source Voltage (V<sub>DS)
620V
Continuous Drain Current (I<sub>D)
3A
On-state Resistance (R<sub>DS(on))
Optimized for efficiency
Gate Charge (Q<sub>g)
Low
Threshold Voltage (V<sub>GS(th))
Low
The STD3N62K3-1 comes in a surface-mount package that is designed for improved thermal performance and reduced board space. This makes it an excellent choice for compact designs where space is at a premium. The device is also characterized by its robustness, with built-in protection features such as avalanche ruggedness, ensuring durability even under stressful conditions.
Ideal for switch-mode power supplies (SMPS), LED lighting, DC-DC converters, and other power-related applications, the STD3N62K3-1 offers a combination of high efficiency, reliability, and performance. Its advanced manufacturing technology also results in lower conduction and switching losses, contributing to energy savings in end-user applications.
In summary, the STD3N62K3-1 by STMicroelectronics is a powerful solution for designers looking to optimize their power management systems with a MOSFET that offers high voltage capability, low on-resistance, and excellent thermal performance.
