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STD17NE03L

Part No STD17NE03L
Manufacturer STMicroelectronics
Catalog FETs - Single
Description N - CHANNEL 30V - 0.034ohm - 17A - DPAK/IPAK STripFET POWER MOSFET
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Manufacturer STMicroelectronics
Category Discrete Semiconductor Products
Family FETs - Single
Win Source Part Number 194311-STD17NE03L
Popularity Medium
Supply and Demand Status Limited
Ultra Librarian 3D Model Ultra Librarian STD17NE03L CAD Model

Description

The STD17NE03L is a high-performance N-channel enhancement-mode Power MOSFET produced using STMicroelectronics' advanced STripFET™ process. It is designed to deliver efficient power management and switching with low on-state resistance and fast switching speeds, making it suitable for a wide range of applications.

Key Features

  • Low Threshold Drive: The device can be driven at lower gate voltages, making it compatible with low-power logic-level devices and microcontrollers.
  • High Current Capability: With a continuous drain current of up to 17A, this MOSFET can handle high current loads, making it ideal for power-intensive applications.
  • Low On-Resistance (RDS(on)): The low on-state resistance minimizes conduction losses, enhancing overall efficiency and thermal performance.
  • 100% Avalanche Tested: Each unit is rigorously tested for avalanche ruggedness, ensuring reliability under stress conditions.

Applications

The STD17NE03L is versatile and can be used in various applications, including:

  • Switching regulators
  • DC/DC converters
  • Motor control
  • Power management in portable and battery-powered devices
  • Automotive applications

Technical Specifications

Parameter Value
Drain-Source Voltage (VDSS) 30V
Continuous Drain Current (ID) 17A
Power Dissipation (PD) 45W
On-Resistance Max (RDS(on)) 0.1Ω
Operating Temperature Range -55°C to 175°C

Quality and Reliability

STMicroelectronics is committed to delivering high-quality products. The STD17NE03L is subject to rigorous testing and quality control procedures, ensuring that it meets the stringent requirements for industrial and automotive-grade components. Users can trust in the reliability and performance of this Power MOSFET for their critical applications.

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