The STD17NE03L is a high-performance N-channel enhancement-mode Power MOSFET produced using STMicroelectronics' advanced STripFET™ process. It is designed to deliver efficient power management and switching with low on-state resistance and fast switching speeds, making it suitable for a wide range of applications.
Key Features
- Low Threshold Drive: The device can be driven at lower gate voltages, making it compatible with low-power logic-level devices and microcontrollers.
- High Current Capability: With a continuous drain current of up to 17A, this MOSFET can handle high current loads, making it ideal for power-intensive applications.
- Low On-Resistance (RDS(on)): The low on-state resistance minimizes conduction losses, enhancing overall efficiency and thermal performance.
- 100% Avalanche Tested: Each unit is rigorously tested for avalanche ruggedness, ensuring reliability under stress conditions.
Applications
The STD17NE03L is versatile and can be used in various applications, including:
- Switching regulators
- DC/DC converters
- Motor control
- Power management in portable and battery-powered devices
- Automotive applications
Technical Specifications
| Parameter |
Value |
| Drain-Source Voltage (VDSS) |
30V |
| Continuous Drain Current (ID) |
17A |
| Power Dissipation (PD) |
45W |
| On-Resistance Max (RDS(on)) |
0.1Ω |
| Operating Temperature Range |
-55°C to 175°C |
Quality and Reliability
STMicroelectronics is committed to delivering high-quality products. The STD17NE03L is subject to rigorous testing and quality control procedures, ensuring that it meets the stringent requirements for industrial and automotive-grade components. Users can trust in the reliability and performance of this Power MOSFET for their critical applications.