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STB76NF80

Part No STB76NF80
Manufacturer STMicroelectronics
Catalog FETs - Single
Description N-channel 80 V, 0.0095 Ω, 80 A D2PAK STripFET™ II Power MOSFET | MOSFET N-CH 80V 80A D2PAK
Sample
Rohs State rohs
ECAD Module
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Categories Discrete Semiconductor Products
Manufacturer STMicroelectronics
Packaging Reel
Status Obsolete
Transistor Polarity N-Channel
Technology MOSFET
Vds - Drain-Source Breakdown Voltage 80V
Id - Continuous Drain Current 80A
Drive Voltage (Max Rds On, Min Rds On) 10V
Rds On (Maximum) at Id, Vgs 11mOhm at 40A, 10V
Gate Source Voltage(th) (Maximum) at Id 4V at 250μA
Gate Charge (Qg) (Maximum) at Vgs 160nC at 10V
Gate Source Voltage (Maximum) ±20V
Input Capacitance (Ciss) (Maximum) at Vds 3700pF at 25V
Power Dissipation (Maximum) 300W
Temperature Range - Operating -55°C ~ 175°C
Mounting Style SMD
Supplier Device Package D2PAK
Manufacturer Package TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
Manufacturer Pack Quantity 1
MSL Level 1 (Unlimited)
Win Source Part Number 1260696-STB76NF80
Manufacturer Homepage www.st.com
Popularity Medium
Supply and Demand Status Limited
Ultra Librarian 3D Model Ultra Librarian STB76NF80 CAD Model

Description

Introducing the STB76NF80 Power MOSFET by STMicroelectronics

The STB76NF80 is a robust and efficient N-channel Power MOSFET from the renowned semiconductor manufacturer, STMicroelectronics. This high-performance transistor is designed to meet the demanding requirements of modern electronic applications, featuring state-of-the-art technology that ensures reliability, high switching speeds, and energy efficiency.

Key Features

  • Advanced Technology: The STB76NF80 utilizes STMicroelectronics' second generation of MDmesh™ technology, which combines the benefits of reduced on-resistance, high dv/dt capability, and low gate charge to deliver superior performance.
  • High Current Capability: With a continuous drain current (ID) of 80A, this MOSFET can handle significant power, making it ideal for high-current applications.
  • High Voltage Tolerance: The device is rated for a maximum drain-source voltage (VDS) of 800V, providing a wide safety margin for applications involving high voltages.
  • Low On-Resistance: The on-resistance (RDS(on)) is exceptionally low, which translates to reduced conduction losses and improved overall efficiency in power conversion systems.
  • Enhanced Thermal Performance: Its TO-220 package is designed for optimal thermal dissipation, ensuring the device operates within safe temperature ranges even under high load conditions.

Applications

The versatility of the STB76NF80 makes it suitable for a wide range of applications, including:

  • Switch Mode Power Supplies (SMPS)
  • High-efficiency DC-DC converters
  • Motor control circuits
  • LED lighting solutions
  • Electronic ballasts for fluorescent lighting
  • Automotive applications and more

The STB76NF80 is not just a testament to STMicroelectronics' commitment to innovation but also an essential component for designers looking to enhance the performance and reliability of their power management systems. With its robust design and superior electrical characteristics, this Power MOSFET stands out as a top choice for engineers and professionals seeking to optimize their electronic designs.

For detailed specifications, application notes, and additional resources, visit the STMicroelectronics product page.

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