STMicroelectronics M95M04-DWDW3TP/V EEPROM
The M95M04-DWDW3TP/V is a high-performance 4 Mbit (Mega-bit) serial EEPROM (Electrically Erasable Programmable Read-Only Memory) from STMicroelectronics, designed to provide flexible non-volatile storage for a wide range of industrial, computing, and consumer applications. This device operates with a supply voltage range of 1.8V to 5.5V, making it suitable for systems that require low power consumption and high endurance.
Key Features:
- Memory Size: 4 Mbit of storage, organized as 512 Kbytes (Kilo-bytes) of 8 bits each, provides ample space for configuration parameters, user settings, and small application code storage.
- Interface: The device supports a standard SPI (Serial Peripheral Interface) bus, ensuring easy integration with most microcontrollers and allowing for fast data transfer rates.
- Write Protection: Enhanced write protection mechanisms, including hardware and software write protect options, safeguard your data against inadvertent changes.
- Endurance: High cycling endurance with 1 million write cycles and a data retention period of over 100 years, guaranteeing the reliability and longevity of the stored data.
- Speed: Fast write speeds and page write mode enable efficient updating of data, with minimal delay and power usage.
- Temperature Range: The device is operational over an industrial temperature range of -40°C to +85°C, ensuring consistent performance even in harsh environmental conditions.
- Packaging: Supplied in a very thin, small outline package (TSSOP8), the M95M04-DWDW3TP/V is optimized for space-constrained applications.
Applications:
The versatility of the M95M04-DWDW3TP/V makes it an ideal choice for a variety of applications, including:
- Industrial control systems
- Medical devices
- Smart meters
- Automotive electronics
- Consumer electronics
- Portable devices
With its robust design and comprehensive feature set, the M95M04-DWDW3TP/V EEPROM from STMicroelectronics provides a reliable and flexible storage solution for designers who require non-volatile memory in their electronic designs.