Overview of M24C32-WMN6TPP
The M24C32-WMN6TPP is a 32-Kbit serial EEPROM (Electrically Erasable Programmable Read-Only Memory) product from STMicroelectronics. This memory device is part of the M24C series, which is known for its robust performance and reliability in a wide range of applications. The M24C32-WMN6TPP utilizes the I²C communication protocol, making it an ideal choice for applications requiring efficient data transfer and serialization of data.
Key Features
- Memory Size: The device offers a storage capacity of 32 Kbits, suitable for storing configuration parameters, serial numbers, and calibration data.
- Interface: It communicates via a two-wire I²C serial interface, supporting both the 100 kHz (standard mode) and 400 kHz (fast mode) communication speeds.
- Supply Voltage: The M24C32-WMN6TPP operates over a wide power supply range of 2.5 V to 5.5 V, making it versatile for various system designs.
- Write Cycle Time: It features a byte and page write time of 5 ms, allowing quick and efficient data storage.
- Package: The device comes in an SO8N package, which is compact and suitable for space-constrained applications.
- Temperature Range: It is designed to operate over an extended temperature range from -40°C to +85°C, ensuring reliability across diverse operating conditions.
- Endurance: The EEPROM offers an endurance of 1 million write cycles, guaranteeing a long operational lifespan for the memory.
- Data Retention: It provides a data retention period of 100 years, ensuring the persistence of stored information over time.
Applications
The M24C32-WMN6TPP is suitable for a broad spectrum of applications that require non-volatile memory storage. Common uses include:
- Consumer electronics
- Industrial automation and control systems
- Medical devices
- Automotive systems
- Telecommunication infrastructure
With its robust feature set and STMicroelectronics' reputation for high-quality semiconductor products, the M24C32-WMN6TPP is a reliable choice for designers and engineers looking to integrate EEPROM memory into their electronic designs.