STMicroelectronics M24C04-WMN6 EEPROM
The M24C04-WMN6 is a 4 Kbit serial EEPROM (Electrically Erasable Programmable Read-Only Memory) from STMicroelectronics that offers a flexible and reliable solution for data storage in a wide range of electronic applications. This memory device utilizes the I²C serial interface, making it easy to integrate into your existing designs.
Key Features
- Memory Size: 4 Kbits of EEPROM memory, organized as 512 x 8 bits, which is ideal for storing configuration settings, calibration data, or small amounts of information that need to be preserved between power cycles.
- Interface: The device supports the I²C (Inter-Integrated Circuit) serial interface protocol, which is widely used for short-distance, intra-board communication. This allows for simple and efficient data transfer between the EEPROM and a microcontroller.
- Write Cycle Time: Fast write cycle times of 5 ms (typical) ensure quick data storage and minimal delay in system operations.
- Operating Voltage Range: The M24C04-WMN6 operates across a voltage range of 2.5 V to 5.5 V, providing flexibility for use in various circuit designs and compatibility with both 3.3 V and 5 V logic levels.
- Package: Housed in a compact SO-8 package, the device occupies minimal board space, making it suitable for space-constrained applications.
- Endurance: High reliability with an endurance of 1 million write cycles and a data retention period of 40 years, ensuring the preservation of data over the long term.
- Temperature Range: The device is designed to operate over an industrial temperature range of -40°C to +85°C, making it suitable for use in harsh environments.
Applications
The M24C04-WMN6 EEPROM is versatile and can be used in a variety of applications, including:
- Consumer Electronics
- Industrial Control Systems
- Medical Devices
- Automotive Systems
- Telecommunications Infrastructure
With its robust design and flexible features, the M24C04-WMN6 from STMicroelectronics is a top choice for designers who require a reliable non-volatile memory solution.