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BU808DFI

Part No BU808DFI
Manufacturer STMicroelectronics
Catalog Transistors (BJT) - Single
Description HIGH VOLTAGE FAST-SWITCHING NPN POWER DARLINGTON
Datasheet
Sample
Rohs State rohs
ECAD Module
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Products specifications Report Issue?

Categories Discrete Semiconductor Products
Manufacturer STMicroelectronics
Packaging Tube
Part Status Obsolete(EOL)
Transistor Type NPN - Darlington
Current - Collector (Ic) (Maximum) 8A
Voltage - Collector Emitter Breakdown (Maximum) 700V
Vce Saturation (Maximum) @ Ib, Ic 1.6V @ 500mA, 5A
Current - Collector Cutoff (Maximum) 400μA
DC Current Gain (hFE) (Minimum) @ Ic, Vce 60 @ 5A, 5V
Power - Max 52W
Operating Temperature Range 150°C (TJ)
Mounting Style Through Hole
Package ISOWATT-218-3
Manufacturer Package ISOWATT-218
Win Source Part Number 1155864-BU808DFI
Manufacturer Homepage www.st.com
Family Name BU808DFI
Introduction Date June 19, 2000
ECCN EAR99
Country of Origin China, India, Malaysia, Morocco, Philippines, Republic of Korea, Singapore
Estimated EOL Date Obsolete
Popularity Medium
Supply and Demand Status Balance
Ultra Librarian 3D Model Ultra Librarian BU808DFI CAD Model

Description

The BU808DFI is a state-of-the-art NPN power transistor developed by STMicroelectronics, designed specifically for high-performance applications that require efficient and reliable high voltage operation. This robust component is well-suited for horizontal deflection stages in high-resolution monitors, high-fidelity TVs, and switching power supplies, making it a popular choice among electronic manufacturers and hobbyists alike.

Key Features

  • High Voltage Capability: The BU808DFI can withstand voltages up to 1500V, providing a wide safety margin for applications prone to high voltage spikes.
  • High Current Performance: With a collector current rating of up to 8A, this power transistor can handle significant power, making it ideal for demanding applications.
  • Low Base-Drive Requirements: The device's low base-drive requirements ensure minimal power loss during operation, leading to enhanced overall efficiency.
  • Integrated Damper Diode: The inclusion of a fast-recovery damper diode provides protection against inductive spikes, ensuring reliable operation under varying conditions.
  • High Switching Speed: The BU808DFI features high switching speed, which is critical for applications such as switching power supplies and high-frequency circuits.

Applications

Thanks to its robust design and high voltage capability, the BU808DFI is perfectly suited for a variety of applications, including:

  • Horizontal deflection systems for CRT monitors and TVs
  • Switching power supplies
  • High power switching circuits
  • Electronic ballasts for lighting
  • Welding equipment

Quality and Reliability

STMicroelectronics is renowned for its commitment to quality and reliability, and the BU808DFI is no exception. Manufactured with state-of-the-art technology and subjected to rigorous testing, this power transistor is designed to meet the highest standards of performance and durability, ensuring a long operational life even in the most challenging environments.

Conclusion

Whether for industrial applications or consumer electronics, the BU808DFI from STMicroelectronics offers a reliable and efficient solution for high voltage, high power requirements. Its combination of high-speed switching, integrated protection features, and low base-drive requirements make it an excellent choice for designers looking to optimize their power management systems.

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