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BD533

Part No BD533
Manufacturer STMicroelectronics
Catalog Transistors (BJT) - Single
Description COMPLEMENTARY SILICON POWER TRANSISTORS
Datasheet
Sample
Rohs State rohs
ECAD Module
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Categories Discrete Semiconductor Products
Manufacturer STMicroelectronics
Packaging Tube
Part Status Obsolete(EOL)
Transistor Type NPN
Current - Collector (Ic) (Maximum) 8A
Voltage - Collector Emitter Breakdown (Maximum) 45V
Vce Saturation (Maximum) @ Ib, Ic 800mV @ 600mA, 6A
Current - Collector Cutoff (Maximum) 100μA
DC Current Gain (hFE) (Minimum) @ Ic, Vce 25 @ 2A, 2V
Power - Max 50W
Operating Temperature Range 150°C (TJ)
Mounting Style Through Hole
Package TO-220-3
Manufacturer Package TO-220AB
Win Source Part Number 1152785-BD533
Manufacturer Homepage www.st.com
Family Name BD533
Introduction Date June 01, 1997
ECCN EAR99
Country of Origin China, India, Malaysia, Morocco, Philippines, Republic of Korea, Singapore
Estimated EOL Date Obsolete
Popularity Medium
Supply and Demand Status Balance
Ultra Librarian 3D Model Ultra Librarian BD533 CAD Model

Description

STMicroelectronics, a global semiconductor leader, presents the BD533, a high-performance silicon NPN power transistor designed to cater to a wide range of applications. This device stands out for its reliability and efficiency, making it an ideal choice for designers looking to enhance their power management solutions.

Key Features

  • High Current Capability: The BD533 is capable of handling high current loads, making it suitable for demanding applications.
  • Low Saturation Voltage: With its low saturation voltage, the BD533 ensures efficient operation, minimizing power losses and improving overall performance.
  • Complementary PNP Type: It offers a complementary PNP type, allowing for flexibility in designing push-pull configurations and other complementary pair applications.

Applications

The versatility of the BD533 allows it to be used in various applications, including:

  • Power regulators
  • Switching circuits
  • Amplifier output stages
  • Motor control systems

Specifications

The BD533 boasts impressive specifications that ensure its performance in a range of conditions:

Parameter Value
Collector-Emitter Voltage (VCEO) 60V
Collector Current (IC) 8A
Power Dissipation (PD) 36W
Junction Temperature (TJ) -65 to 150°C

Quality and Reliability

STMicroelectronics is committed to delivering products that meet the highest standards of quality and reliability. The BD533 is manufactured in state-of-the-art facilities, ensuring that each unit meets the rigorous requirements of the electronics industry. With its robust construction and proven design, the BD533 is built to provide long-lasting performance even in the most challenging environments.

For detailed information, datasheets, and technical support, customers are encouraged to visit STMicroelectronics' official website or contact their local sales office.

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Pricing & Ordering

Quantity Unit Price Ext. Price
90+ $0.6722 $60.4980
210+ $0.5521 $115.9410
325+ $0.5348 $173.8100
450+ $0.5174 $232.8300
580+ $0.5001 $290.0580
775+ $0.4481 $347.2775
* Prices exclude shipping and taxes. Shipping costs are calculated at checkout.
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Availability: 2,100 pieces
MOQ: 90 pcs
Order Increment : 1 pcs
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