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SVD75N08T

Part No SVD75N08T
Manufacturer Silan
Catalog HOT - SALES and EOL Components (S)
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Manufacturer Silan
Win Source Part Number 349519-SVD75N08T
Popularity Low
Supply and Demand Status Limited
Ultra Librarian 3D Model Ultra Librarian SVD75N08T CAD Model

Description

The SVD75N08T is an N-channel enhancement mode power MOSFET manufactured by Silan. It is designed for efficient power switching applications requiring high current and voltage handling capabilities. The device incorporates advanced trench MOSFET technology to minimize on-state resistance (RDS(on)) and gate charge, leading to improved power conversion efficiency and reduced heat generation.

Applications:

  • Synchronous rectification in power supplies
  • DC-DC converters and inverters
  • Motor control applications
  • Battery management systems
  • Uninterruptible Power Supplies (UPS)

Features:

  • Low on-resistance (RDS(on)): Reduces conduction losses, improving efficiency.
  • Fast switching speed: Minimizes switching losses, enhancing overall performance.
  • Low gate charge (Qg): Reduces gate drive power requirements.
  • High avalanche energy: Provides robust operation under inductive loads.
  • Trench MOSFET technology: Offers superior performance compared to planar MOSFETs.
  • Pb-free package: Compliant with RoHS standards.

Benefits:

  • Increased power efficiency: Low RDS(on) and Qg contribute to reduced power consumption and heat dissipation.
  • Enhanced system reliability: High avalanche energy ensures robust performance under transient conditions.
  • Simplified gate drive circuitry: Low gate charge simplifies the design of the gate drive circuit.
  • Compact design: Available in a surface-mount package for efficient board space utilization.
  • Environmentally friendly: Pb-free package complies with environmental regulations.

The SVD75N08T features a drain-source voltage (VDS) of 80V and a continuous drain current (ID) of up to 75A. This enables its use in high-power applications where minimizing losses is critical. The gate threshold voltage (VGS(th)) is designed for easy driving, typically compatible with standard logic levels. It's commonly packaged in a TO-252 or similar package that allows efficient heat removal. This MOSFET is a good choice for designers seeking a combination of high current capability, low on-resistance, and fast switching speeds.

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Pricing & Ordering

Quantity Unit Price Ext. Price
120+ $0.4897 $58.7640
290+ $0.4019 $116.5510
450+ $0.3892 $175.1400
615+ $0.3777 $232.2855
795+ $0.3650 $290.1750
1,065+ $0.3269 $348.1485
* Prices exclude shipping and taxes. Shipping costs are calculated at checkout.
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Availability: 1,080 pieces
MOQ: 120 pcs
Order Increment : 1 pcs
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