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M393T6553CZA-CE6

Part No M393T6553CZA-CE6
Manufacturer Samsung
Catalog Memory - Modules
Description DDR2-667 64Mx72 ECC Reg
Sample
Rohs State rohs
ECAD Module
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Categories Memory - Modules
Win Source Part Number 950750-M393T6553CZA-CE6
Series *
Ultra Librarian 3D Model Ultra Librarian M393T6553CZA-CE6 CAD Model

Description

The Samsung M393T6553CZA-CE6 is a 512MB DDR2 533MHz ECC Registered DIMM memory module. This module is designed for servers and workstations that require high reliability and data integrity. It features ECC (Error-Correcting Code) functionality, which detects and corrects single-bit memory errors, preventing data corruption and system instability. The registered design enhances signal quality and supports larger memory configurations, making it ideal for demanding server environments.

Applications

  • Servers
  • Workstations
  • High-Performance Computing
  • Data Centers

Features

  • 512MB Capacity
  • DDR2 Technology
  • 533MHz Clock Speed (PC2-4200)
  • DIMM Form Factor (240-pin)
  • ECC (Error-Correcting Code)
  • Registered
  • 1.8V Operating Voltage
  • Double Sided

Benefits

  • Enhanced Data Integrity: ECC memory prevents data corruption by detecting and correcting single-bit errors.
  • Improved System Stability: Reduces the risk of system crashes and downtime due to memory errors.
  • Increased Reliability: The registered design enhances signal quality and supports larger memory configurations.
  • Optimized for Server Environments: Specifically designed for the demanding requirements of servers and workstations.
  • Cost-Effective Solution: A reliable memory upgrade option for older server systems.

Additional Details

The M393T6553CZA-CE6 is a double-sided DIMM, meaning memory chips are located on both sides of the module. It operates at a standard voltage of 1.8V and complies with JEDEC standards for DDR2 memory. This module features a register between the memory controller and the DRAM chips, improving signal integrity and enabling larger memory capacities. The 'CE6' likely refers to a specific revision or manufacturing detail of the memory.

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