The Samsung M391A2K43DB1-CWE is a 16GB DDR4-2666 ECC Unbuffered DIMM (UDIMM). This memory module is designed for workstations and servers requiring high capacity and data integrity. Its ECC (Error Correcting Code) functionality ensures data reliability by detecting and correcting single-bit errors.
Applications:
- Workstations
- Servers
- High-performance PCs
- Data centers
- Scientific computing
Features:
- 16GB capacity
- DDR4-2666 (PC4-21300) speed
- ECC Unbuffered DIMM (UDIMM)
- 288-pin DIMM
- Operating voltage of 1.2V
- CL19 latency
Benefits:
- High capacity for memory-intensive applications
- Fast data transfer rates improve system performance
- ECC functionality ensures data integrity
- Low voltage operation reduces power consumption
- Easy to install in compatible systems
Additional Details:
The M391A2K43DB1-CWE operates at a speed of 2666MHz, providing fast data transfer rates for demanding applications. The ECC functionality is critical for maintaining data accuracy in environments where errors can occur. The 1.2V operating voltage reduces power consumption, contributing to energy savings and lower operating costs. The module’s 288-pin DIMM form factor ensures compatibility with a wide range of motherboards designed for DDR4 memory. Its CL19 latency represents the delay between the time data is requested and the time it is available, affecting overall system responsiveness. This memory module provides an efficient and reliable solution for workstations and servers that require high capacity and data integrity.
The 16GB capacity allows for running multiple applications simultaneously and handling large datasets. The high-speed DDR4-2666 interface enhances overall system performance by reducing memory bottlenecks. The ECC feature provides an additional layer of protection against data corruption, making it suitable for critical applications where data accuracy is paramount. Its standard UDIMM design allows for simple installation, facilitating upgrades and maintenance. The M391A2K43DB1-CWE is an excellent choice for users seeking a combination of high capacity, speed, and reliability in their memory modules.