The KM68V1002CTI-12 is a high-speed, low-power 1 Mbit Static Random Access Memory (SRAM) manufactured by Samsung. This SRAM is organized as 128K x 8 bits and is designed for applications requiring fast access times and minimal power consumption. It is commonly used in embedded systems, cache memory for microprocessors, and applications needing rapid data storage and retrieval.

Applications

• Embedded systems
• Cache memory for microprocessors
• Networking equipment
• Industrial control systems
• Medical devices

Features

• High-speed access time: 12 ns
• Low power consumption: Active and Standby modes
• Single 3.3V power supply
• TTL compatible inputs and outputs
• Fully static operation: No clock or refresh required
• Data retention voltage: 2V (minimum)
• Operating temperature range: -40°C to +85°C
• Package: TSOP32

Benefits

• Fast data access speeds enable high-performance system operation.
• Low power consumption extends battery life in portable devices.
• Easy to interface with standard TTL logic circuits.
• Simplified system design due to fully static operation.
• Wide operating temperature range ensures reliable operation in harsh environments.
• Compact package options provide flexibility in PCB layout.

Additional Details

The KM68V1002CTI-12's fast access time of 12ns makes it suitable for applications where speed is critical. Its low power consumption is a significant advantage in battery-powered applications. The device operates from a single 3.3V power supply and features TTL-compatible inputs and outputs for easy integration with other system components. The fully static operation simplifies system design by eliminating the need for external clocks or refresh circuitry.

Samsung's KM68V1002CTI-12 SRAM is a reliable and cost-effective solution for various memory applications. The device is available in TSOP32 package, providing flexibility in PCB layout. It supports a wide operating temperature range of -40°C to +85°C, making it suitable for use in industrial, commercial, and automotive environments.