The K9F4G08U0F-SIB0 is a 4Gbit NAND Flash memory device manufactured by Samsung. This memory chip is designed for high-density storage applications, offering a cost-effective and reliable solution for embedded systems, consumer electronics, and data storage devices.

Applications:

• Solid State Drives (SSDs)
• USB Flash Drives
• Memory Cards (SD, microSD)
• Embedded Systems
• Digital Cameras and Camcorders
• Mobile Phones and Tablets

Features:

• 4Gbit (512M x 8 bit) capacity
• Supply Voltage: 2.7V ~ 3.6V
• Page Size: (2K + 64) Bytes
• Block Size: (128K + 4K) Bytes
• Serial Interface
• Data Retention: 10 years
• Endurance: 100,000 Program/Erase Cycles
• Operating Temperature: -40°C to +85°C
• RoHS Compliant

Benefits:

• High storage density in a small form factor
• Fast data access and transfer rates
• Low power consumption
• High reliability and endurance
• Cost-effective storage solution
• Wide operating temperature range for use in diverse environments

Technical Specifications:

The K9F4G08U0F-SIB0 utilizes a serial interface for data transfer. It features a page size of (2K + 64) bytes and a block size of (128K + 4K) bytes. The device operates on a supply voltage of 2.7V to 3.6V. It is designed for high endurance, capable of withstanding 100,000 program/erase cycles. The data retention is specified at 10 years. The operating temperature range is from -40°C to +85°C.

This NAND Flash memory chip provides a reliable and efficient storage solution for a wide range of applications. Its high density, fast performance, and low power consumption make it suitable for use in demanding environments.