The K6X0808C1D-GF70T00 is a high-performance 8M-bit Static RAM (SRAM) device from Samsung. It's engineered for applications requiring high-speed data access and low power consumption. Its features make it suitable for use in embedded systems, networking equipment, and other high-performance applications.

Applications:

• Embedded Systems
• Networking Equipment
• Industrial Control Systems
• Cache Memory
• Portable Devices

Features:

• Fast Access Time: 70ns
• Low Power Consumption
• Single 3.3V Power Supply
• TTL Compatible Inputs and Outputs
• Operating Temperature Range: -40°C to +85°C
• 8,388,608-bit memory organization (1M x 8)

Benefits:

• Enhanced system performance due to its rapid data access capabilities.
• Extended battery life in portable devices because of its low power consumption.
• Simplified integration into existing systems with TTL compatible I/O.
• Reliable operation in harsh environments due to the wide operating temperature range.
• High memory capacity in a small footprint.

Additional Details:

The K6X0808C1D-GF70T00 is built using advanced CMOS technology to achieve its high speed and low power consumption. The memory is organized as 1M word by 8 bits. The device supports read, write, and standby modes, which allows for efficient power management. It comes in different package options to accommodate various mounting needs. For detailed technical information, including timing diagrams and electrical characteristics, refer to the official Samsung datasheet. This SRAM is a reliable memory solution for a wide range of applications that demand high performance and low power.