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K6R4016C1D-UI10T00

Part No K6R4016C1D-UI10T00
Manufacturer Samsung
Catalog SRAM
Description SRAM 256Kx16-10
Sample
Rohs State rohs
ECAD Module
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Categories Memory
Win Source Part Number 957302-K6R4016C1D-UI10T00
Series *
Ultra Librarian 3D Model Ultra Librarian K6R4016C1D-UI10T00 CAD Model

Description

The K6R4016C1D-UI10T00 is a high-speed Static Random Access Memory (SRAM) chip manufactured by Samsung. SRAM is a type of semiconductor memory known for its fast access times and its ability to retain data as long as power is supplied, without requiring periodic refreshing like DRAM. This makes it ideal for applications demanding quick and reliable memory access.

Applications:

  • Cache Memory: Used in CPUs and other processors as high-speed cache to minimize latency and improve performance.
  • Networking Equipment: Employed in routers, switches, and other networking devices for storing routing tables and configuration data, enabling fast data transfer.
  • Telecommunications Systems: Used in telecommunications equipment for buffering data and storing control information.
  • Industrial Automation: Utilized in industrial control systems for storing program code and process data where speed and reliability are critical.
  • Medical Devices: Integrated into medical imaging equipment and other medical devices for storing and processing data with high precision.

Features:

  • High-Speed Access Time: Provides very fast read and write access times, crucial for real-time applications.
  • Low Power Consumption: Designed for energy efficiency, making it suitable for battery-powered devices.
  • Single Power Supply: Operates from a single power supply voltage, simplifying system design.
  • TTL Compatible Inputs/Outputs: Compatible with TTL logic levels, facilitating easy integration with other components.
  • Data Retention: Retains data as long as power is supplied, ensuring data integrity and eliminating the need for refresh cycles.
  • Byte Write Control: Supports byte-wide write operations, allowing flexible data manipulation and efficient memory usage.

Benefits:

  • Improved System Performance: Fast access times result in significant enhancements in overall system performance.
  • Energy Efficiency: Low power consumption allows for extended battery life in portable devices and reduces heat dissipation.
  • Simplified Integration: Single power supply operation simplifies board design and reduces component count.
  • Reliable Data Storage: Ensures that data is securely stored and readily available as long as power is supplied.
  • Versatile Application: Well-suited for a wide range of applications that require high-speed memory access and robust data storage.

Additional Details:

The specific capacity, access time, and operating voltage of the K6R4016C1D-UI10T00 can be found in the corresponding Samsung datasheet. SRAM is generally more expensive than DRAM but offers significantly faster access speeds and simplified control. The package is likely a TSOP (Thin Small Outline Package). Important operating parameters include its operating temperature range and standby current consumption. Always consult the manufacturer's datasheet for accurate electrical characteristics, timing diagrams, and package dimensions.

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