The Samsung K4T51163QQ-BCF8 is a DDR3 SDRAM (Synchronous Dynamic Random-Access Memory) component designed for high-performance applications. It offers high-speed data transfer and efficient power consumption, making it suitable for a variety of computing environments requiring substantial memory capacity and bandwidth.

Applications:

• Desktop PCs
• Laptop computers
• Gaming consoles
• Graphics cards
• Embedded systems

Features:

• DDR3 technology for high-speed data transfer
• 512Mb (32M x 16) memory organization
• Operating Voltage: 1.5V
• Data transfer rates up to 1866 Mbps
• RoHS compliant
• FBGA package for efficient thermal management and compact integration

Benefits:

• Improved system performance due to fast memory access
• Enhanced multitasking capabilities with high memory capacity
• Enhanced gaming and graphics performance
• Reduced power consumption compared to DDR2 SDRAM
• Improved reliability and stability in demanding applications

Additional Details:

The K4T51163QQ-BCF8 includes features such as Write Leveling, On-Die Termination (ODT), and Dynamic Calibration to optimize signal integrity and power efficiency, contributing to the overall stability and reliability of the memory subsystem. The FBGA package facilitates compact integration into various system designs. Constructed using advanced semiconductor technology, this DDR3 SDRAM component delivers high performance and long-term reliability in diverse computing environments.