The Samsung K4T51083QQ-BCE6 is a 512Mbit DDR2 SDRAM (Synchronous Dynamic Random-Access Memory) component. It is designed to provide high-speed data access and storage for a variety of applications. It balances performance and power efficiency.

Applications

• Graphics cards
• Gaming Consoles
• Embedded Systems
• Networking Equipment
• Set-Top Boxes

Features

• 512Mbit (64M x 8) memory density
• DDR2 Interface: High-speed data transfer capabilities
• Operating Frequency: Up to 800MHz
• Double Data Rate Architecture: Transfers data on both rising and falling edges of the clock signal
• On-Chip DLL (Delay-Locked Loop): Enhances timing precision
• Data Mask (DM): Enables selective write operations
• Lead-Free and RoHS Compliant

Benefits

• Improved system performance due to high memory bandwidth
• Enhanced graphics rendering capabilities
• Efficient data processing in networking applications
• Reduced power consumption compared to older memory technologies
• Compliance with environmental regulations

Technical Specifications

The K4T51083QQ-BCE6 operates at a voltage of 1.8V. It supports burst lengths of 2, 4, and 8. This DDR2 SDRAM is available in a FBGA (Fine-pitch Ball Grid Array) package for surface mounting on PCBs. The operating temperature range is typically between 0°C and 85°C. It is designed to meet the JEDEC standards for DDR2 SDRAM.

This memory component offers a reliable and efficient memory solution for a wide range of applications. Its high speed and relatively low power consumption make it a suitable choice for demanding applications where performance is critical.