The Samsung K4T1G164QQ-HCE600 is a 1Gb (Gigabit) DDR3 SDRAM (Double Data Rate Three Synchronous Dynamic Random-Access Memory) chip designed for high-speed data access and storage. It is commonly used in various computing and electronic applications that demand efficient memory performance.

Applications

• Desktop and laptop computers
• Gaming consoles
• Networking devices
• Embedded systems
• Graphics cards

Features

• 1Gb (64M x 16) memory organization
• DDR3 architecture
• Data transfer rates up to 1600 Mbps (PC3-12800)
• 8 internal banks for concurrent operation
• 8-bit prefetch architecture
• Programmable burst length: 4, 8
• Automatic and self-refresh capabilities
• On-die termination (ODT)
• Operating voltage: 1.5V
• Lead-free package

Benefits

• Enhanced system performance through high-speed data transfer
• Reduced power consumption compared to DDR2
• Improved signal integrity with ODT
• Increased memory density for demanding applications

Additional Details

The K4T1G164QQ-HCE600 is packaged in a FBGA (Fine-pitch Ball Grid Array). The DDR3 standard offers significant improvements in bandwidth and power efficiency compared to previous generations of DDR memory. The 'HCE600' likely indicates the speed grade and specific timings supported. On-die termination (ODT) improves signal integrity, reducing noise and reflections on the memory bus. The automatic and self-refresh capabilities ensure that data is retained reliably without constant intervention from the memory controller. This memory component is designed to meet the demanding performance requirements of modern computing and embedded systems.