The Samsung K4P8G304EB-AGC2 is an 8Gb (Gigabit) DDR3 SDRAM (Double Data Rate Three Synchronous Dynamic Random-Access Memory) component. This memory chip is designed for high-performance applications that demand significant memory bandwidth and capacity, such as high-end computing, gaming, and professional graphics.

Applications

• High-performance desktop PCs
• Gaming laptops and consoles
• Workstations
• Servers
• High-end graphics cards

Features

• 8Gb (1G x 8) memory organization
• DDR3 architecture providing high bandwidth
• Data transfer rates up to 1600 Mbps (PC3-12800)
• 8 internal banks for concurrent operation
• 8-bit prefetch architecture
• Programmable burst length: 4, 8
• Automatic and self-refresh capabilities
• On-die termination (ODT)
• Operating voltage: 1.5V
• Lead-free package

Benefits

• Increased system performance due to high bandwidth
• Improved memory capacity for demanding applications
• Reduced power consumption compared to DDR2
• Enhanced signal integrity with ODT
• Reliable data storage with built-in error correction capabilities

Additional Details

The K4P8G304EB-AGC2 is packaged in a FBGA (Fine-pitch Ball Grid Array) package. DDR3 SDRAM operates at a lower voltage (1.5V) compared to DDR2, leading to lower power consumption and reduced heat generation. The on-die termination (ODT) feature improves signal integrity by reducing reflections and noise on the memory bus. Its high bandwidth and capacity make it suitable for applications requiring large amounts of memory and fast data access. The automatic and self-refresh capabilities maintain data integrity without external intervention. The specific AGC2 speed grade designates the maximum clock frequency and timings supported.