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K4H511638N-LCCC

Part No K4H511638N-LCCC
Manufacturer Samsung
Catalog DDR
Description DDR-333 32Mx16
Sample
Rohs State rohs
ECAD Module
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Categories Memory
Win Source Part Number 944203-K4H511638N-LCCC
Series *
Ultra Librarian 3D Model Ultra Librarian K4H511638N-LCCC CAD Model

Description

The Samsung K4H511638N-LCCC is a 512Mb DDR SDRAM (Double Data Rate Synchronous Dynamic Random-Access Memory) component. This memory chip is designed for high-speed data transfer and is commonly used in applications requiring significant memory bandwidth. It's manufactured by Samsung, a leading provider of memory solutions.

Applications

  • Graphics cards
  • Gaming consoles
  • Networking equipment
  • High-performance computing systems
  • Desktop and laptop computers

Features

  • Density: 512Mb (32M x 16)
  • Organization: 32M x 16 bits
  • Interface: DDR (Double Data Rate)
  • Clock Frequency: Follows the JEDEC standard for DDR SDRAM
  • Data Rate: Up to [Specify Data Rate, e.g., 400 Mbps, if available, otherwise omit]
  • Voltage: Typically operates at 2.5V
  • Package: [Specify Package type, e.g., FBGA, if available, otherwise omit]
  • Operating Temperature: [Specify Temperature Range, if available, otherwise omit]

Benefits

  • High Bandwidth: DDR technology allows for fast data transfer rates, improving system performance.
  • Improved System Performance: Reduces latency with high-speed memory access, leading to improved responsiveness.
  • Power Efficiency: Designed for low power consumption, making it suitable for various applications.
  • Reliable Operation: Samsung's manufacturing ensures high reliability and stable performance.
  • Compact Form Factor: [Mention if package is compact, e.g., FBGA allows for high density in a small area, if available, otherwise omit]

Additional Details

The K4H511638N-LCCC is compliant with JEDEC standards for DDR SDRAM. For specific timing parameters and operating conditions, please refer to the official Samsung datasheet. This component is well-suited for applications demanding reliable and high-performance memory.

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