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K4H511638C-GCB0

Part No K4H511638C-GCB0
Manufacturer Samsung
Catalog DDR
Description DDR-266 32Mx16 BGA
Sample
Rohs State rohs
ECAD Module
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Categories Memory
Win Source Part Number 944035-K4H511638C-GCB0
Series *
Ultra Librarian 3D Model Ultra Librarian K4H511638C-GCB0 CAD Model

Description

The Samsung K4H511638C-GCB0 is a 512Mb DDR SDRAM (Double Data Rate Synchronous Dynamic Random-Access Memory) chip. As a DDR memory device, it offers improved bandwidth compared to its SDR (Single Data Rate) counterparts, making it suitable for applications requiring faster data processing. Samsung is the manufacturer, a well-known company in the memory industry.

Applications

  • Graphics cards
  • Desktop and laptop computers
  • Gaming consoles
  • Networking devices (routers, switches)
  • Embedded systems

Features

  • Density: 512Mb (32M x 16)
  • Organization: 32M x 16 bits
  • Interface: DDR SDRAM
  • Clock Frequency: Follows JEDEC standard specifications for DDR SDRAM
  • Data Rate: [Specific data rate, e.g., 400Mbps, if available, otherwise omit]
  • Voltage: Typically 2.5V
  • Package: [Specific package type, e.g., FBGA, if available, otherwise omit]
  • Operating Temperature Range: [Specific temperature range, if available, otherwise omit]

Benefits

  • High Bandwidth: Provides faster data transfer rates than SDR SDRAM, improving system performance.
  • Improved System Performance: Enables quicker loading times and smoother multitasking.
  • Power Efficiency: Operates at a relatively low voltage (typically 2.5V), reducing power consumption.
  • Reliable Operation: Manufactured by Samsung, ensuring quality and reliability.
  • Cost-Effective: DDR SDRAM offers a good balance between performance and cost.

Additional Details

The K4H511638C-GCB0 is designed to meet JEDEC standards for DDR SDRAM. For precise timing parameters and operating conditions, refer to the official Samsung datasheet. This memory chip is designed for applications requiring a reliable and efficient memory solution.

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