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RGTH60TS65DGC13

Name: RGTH60TS65DGC13
Brand: Rohm Semiconductor
SKU: 1376616
Availability: InStock
Rating: 4.84 (5 reviews)

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Part No	RGTH60TS65DGC13
Manufacturer	Rohm Semiconductor
Catalog	IGBTs - Single
Description	IGBT TRENCH FIELD 650V 58A TO247
Datasheet	RGTH60TS65DGC13 Datasheet
Sample
Rohs State
ECAD Module
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Products specifications Report Issue?

Category	Discrete Semiconductor Products - Transistors - IGBTs - Single IGBTs
Mfr	Rohm Semiconductor
Series	-
Package	Tube
Product Status	Active
IGBT Type	Trench Field Stop
Voltage - Collector Emitter Breakdown (Max)	650 V
Current - Collector (Ic) (Max)	58 A
Current - Collector Pulsed (Icm)	120 A
Vce(on) (Max) @ Vge, Ic	2.1V @ 15V, 30A
Power - Max	194 W
Switching Energy	-
Input Type	Standard
Gate Charge	58 nC
Td (on/off) @ 25°C	27ns/105ns
Test Condition	400V, 30A, 10Ohm, 15V
Reverse Recovery Time (trr)	58 ns
Temperature Range - Operating	-40°C ~ 175°C (TJ)
Mounting Type	Through Hole
Package / Case	TO-247-3
Supplier Device Package	TO-247
Base Product Number	RGTH60
MSL Level	1 (Unlimited)
REACH Status	REACH Unaffected
ECCN	EAR99
HTSUS	8541.29.0095
Win Source Part Number	1376616-RGTH60TS65DGC13
Ultra Librarian 3D Model	Ultra Librarian RGTH60TS65DGC13 CAD Model

Description

The 1376616-RGTH60TS65DGC13 is a single IGBT (Insulated Gate Bipolar Transistor) from Rohm Semiconductor.

Maximum Collector Current: 58A
Maximum Collector-Emitter Breakdown Voltage: 650V
On-State Voltage: 2.1V @ a gate-emitter voltage of 15V and a collector current of 30A
Reverse Recovery Time: 58ns
Gate Charge: 58nC
Maximum Power Dissipation: 194W
Package: TO-247-3
Mounting Type: Through-Hole

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Pricing & Ordering

Quantity	Unit Price	Ext. Price
10+	$5.2001	$52.0010
24+	$4.2667	$102.4008
37+	$4.1334	$152.9358
50+	$4.0000	$200.0000
65+	$3.8667	$251.3355
87+	$3.4667	$301.6029

* Prices exclude shipping and taxes. Shipping costs are calculated at checkout.

Availability: 12,000 pieces

MOQ: 10 pcs

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