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2SK2793

Part No 2SK2793
Manufacturer Rohm Semiconductor
Catalog Hard To Find
Description Switching (500V, 5A)
Sample
Rohs State rohs
ECAD Module
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Manufacturer Rohm Semiconductor
Win Source Part Number 1127375-2SK2793
Manufacturer Homepage www.rohm.com
Popularity Medium
Supply and Demand Status Balance
Ultra Librarian 3D Model Ultra Librarian 2SK2793 CAD Model

Description

The 2SK2793 is an N-channel MOSFET from Rohm Semiconductor, designed for high-speed switching applications. This transistor is characterized by its low on-resistance and fast switching speed, making it suitable for various power management and control circuits.

Applications

  • DC-DC converters
  • AC adapters
  • Power management circuits in portable devices
  • Motor control circuits
  • Switching regulators

Features

  • N-Channel MOSFET
  • Low on-resistance (RDS(on))
  • Fast switching speed
  • High avalanche energy capability
  • Available in a surface-mount package
  • RoHS compliant

Benefits

  • Improved efficiency in power conversion due to low on-resistance, minimizing power loss.
  • Reduced switching losses and enhanced overall system performance with fast switching speed.
  • Enhanced reliability and robustness with high avalanche energy capability.
  • Compact design and ease of assembly with surface-mount package.
  • Environmentally friendly due to RoHS compliance.

Additional Details

The 2SK2793 typically comes in a small surface-mount package, like a SOT-23 or similar, making it suitable for high-density circuit board layouts. Its key electrical parameters include a drain-source voltage (VDS) rating, a gate-source voltage (VGS) rating, and a continuous drain current (ID) rating. The specific values for these parameters depend on the exact datasheet revision and should be consulted for accurate design considerations. It is commonly used in applications where minimizing power dissipation and maximizing efficiency are critical design goals. Always refer to the Rohm Semiconductor datasheet for the most up-to-date specifications and application guidelines.

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