The 2SA1952-R is a PNP silicon epitaxial transistor produced by Rohm Semiconductor, designed primarily for audio amplifier applications. It is engineered to deliver high-quality audio amplification with minimal distortion. Its robust design and electrical characteristics make it suitable for a wide range of audio equipment.

Applications

• Audio amplifiers (e.g., headphone amplifiers, power amplifiers)
• Pre-amplifier stages
• Mixer circuits
• Equalization circuits
• High-fidelity audio equipment

Features

• PNP Silicon Epitaxial Transistor
• Low noise figure
• High gain
• Excellent linearity
• Compact package

Benefits

• Superior Audio Quality: Low noise and excellent linearity ensure clear and accurate sound reproduction.
• High Amplification: High gain allows for significant signal amplification with minimal input.
• Reduced Distortion: Minimizes unwanted harmonics and artifacts, enhancing audio fidelity.
• Compact Design: Enables integration into space-constrained audio devices.
• Reliable Performance: Rohm Semiconductor's quality control ensures consistent and stable operation.

Additional Details

The 2SA1952-R boasts a collector-emitter voltage (VCEO) of -120V, a collector current (IC) of -1.5A, and a power dissipation (PC) of 20W. These specifications allow it to handle a significant amount of power, making it suitable for power amplifier stages. The low noise figure ensures that the amplified signal remains clean, free from unwanted background noise. The transistor’s high gain simplifies the design of amplifier circuits, reducing the need for multiple amplification stages. It is commonly found in high-end audio equipment, contributing to the overall quality and performance of the audio system. Furthermore, its reliability ensures long-term, stable operation, making it a preferred choice for professional audio applications.