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Same model may have multiple batches, images only for reference.
UPA901TU-T3-A
Same model may have multiple batches, images only for reference.

UPA901TU-T3-A

Part No UPA901TU-T3-A
Manufacturer Renesas Electronics America
Catalog RF Transistors (BJT)
Description RF SMALL SIGNAL TRANSISTOR / RF Transistor 2 NPN (Dual) 4.5V 75mA, 250mA 410mW Surface Mount 8-MINIMOLD
Sample
Rohs State rohs
ECAD Module
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Products specifications Report Issue?

Category Discrete Semiconductor Products>Transistors - Bipolar (BJT) - RF
Mfr Renesas Electronics America Inc
Package Bulk
Product Status Obsolete
Transistor Type 2 NPN (Dual)
Voltage - Collector Emitter Breakdown (Max) 4.5V
Power - Max 410mW
DC Current Gain (hFE) (Min) @ Ic, Vce 80 @ 6mA, 3V / 80 @ 20mA, 3V
Current - Collector (Ic) (Max) 75mA, 250mA
Mounting SMD (SMT)
Package / Case 8-SMD, Flat Lead Exposed Pad
Supplier Device Package 8-MINIMOLD
ECCN EAR99
HTSUS 8541.21.0075
Other Names 2156-UPA901TU-T3-A-RETR,RENRNSUPA901TU-T3-A
Standard Package 5,000
Win Source Part Number 975524-UPA901TU-T3-A
Ultra Librarian 3D Model Ultra Librarian UPA901TU-T3-A CAD Model

Description

The Renesas Electronics America UPA901TU-T3-A is a high-quality bipolar transistor that is designed for use in RF applications.

  • Maximum Power: 410mW
  • Voltage Collector Emitter Breakdown: 4.5V
  • Current Collector: 75mA and 250mA
  • DC Current Gain (hFE): 80 @ 6mA, 3V / 80 @ 20mA, 3V
  • Transistor Type: 2 NPN (Dual)
  • Package: 8-SMD, flat lead exposed pad package
  • Status: Obsolete
  • Supplier Device Package: 8-MINIMOLD

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