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Same model may have multiple batches, images only for reference.
RJP60F5DPK-01#T0 Real Image
Same model may have multiple batches, images only for reference.

RJP60F5DPK-01#T0

Part No RJP60F5DPK-01#T0
Manufacturer Renesas Electronics America
Catalog IGBTs - Single
Description IGBT 600V 80A 260.4W / IGBT 600 V 80 A 260.4 W Through Hole TO-3P
Sample
Rohs State rohs
ECAD Module
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Products specifications Report Issue?

Category Discrete Semiconductor Products - Transistors - IGBTs - Single IGBTs
Mfr Renesas Electronics America
Package Tube
Product Status Active
Voltage - Collector Emitter Breakdown (Max) 600 V
Current - Collector (Ic) (Max) 80 A
Current - Collector Pulsed (Icm) 160 A
Vce(on) (Max) @ Vge, Ic 1.8V @ 15V, 40A
Power - Max 260.4 W
Input Type Standard
Gate Charge 74 nC
Td (on/off) @ 25°C 53ns/90ns
Test Condition 400V, 30A, 5Ohm, 15V
Temperature Range - Operating 150°C (TJ)
Mounting Type Through Hole
Package / Case TO-220-3 Full Pack
Supplier Device Package TO-3P
Base Product Number RJP60F5
Standard Package 1 pcs
MSL Level 1 (Unlimited)
REACH Status REACH Affected
ECCN EAR99
HTSUS 8541.29.0095
Win Source Part Number 891805-RJP60F5DPK-01#T0
Ultra Librarian 3D Model Ultra Librarian RJP60F5DPK-01#T0 CAD Model

Description

The RJP60F5DPK-01#T0 is a single IGBT (Insulated Gate Bipolar Transistor) designed for discrete semiconductor applications.

  • Maximum Power: 260.4 W
  • Voltage Breakdown: 600 V
  • Maximum Collector Current: 80 A
  • Vce(on): 1.8V @ 15V, 40A
  • Input Type: Standard
  • Gate Charge: 74 nC
  • Td (on/off): 53ns/90ns @ 25°C
  • Test Condition: 400V, 30A, 5Ohm, 15V
  • Mounting: Through-hole
  • Package/Case: TO-220-3 Full Pack
  • Supplier Device Package: TO-3P
  • Operating Temperature: 150°C (TJ)
  • ECCN: EAR99
  • Manufacturer: Renesas Electronics America
  • Status: Active
  • MSL Level: 1 (Unlimited)
  • REACH: Affected

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