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RJK5030DPD-03#J2

Part No RJK5030DPD-03#J2
Manufacturer Renesas Electronics America
Catalog Transistors - FETs, MOSFETs - RF
Description RJK5030DPD - N CHANNEL MOSFET  /  N-Channel 500 V 5A (Ta) 41.7W (Tc) Surface Mount MP-3A
Sample
Rohs State Need to verify
ECAD Module
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Products specifications Report Issue?

Category Discrete Semiconductor Products>Transistors - FETs, MOSFETs - Single
Mfr Renesas
Package Bulk
Product Status Obsolete
FET Type N-Channel
Technology MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 500 V
Current - Continuous Drain (Id) @ 25°C 5A (Ta)
Drive Voltage (Max Rds On, Min Rds On) 10V
Rds On (Max) @ Id, Vgs 1.6Ohm @ 2A, 10V
Vgs(th) (Max) @ Id 4.5V @ 1mA
Vgs (Max) ±30V
Input Capacitance (Ciss) (Max) @ Vds 550 pF @ 25 V
Power Dissipation (Max) 41.7W (Tc)
Temperature Range - Operating 150°C
Mounting SMD (SMT)
Supplier Device Package MP-3A
Package / Case TO-252-3, DPak (2 Leads + Tab), SC-63
RoHS Status RoHS non-compliant
REACH Status REACH Unaffected
ECCN EAR99
HTSUS 8541.29.0095
Other Names 2156-RJK5030DPD-03#J2
Standard Package 1
Win Source Part Number 1088478-RJK5030DPD-03#J2
Ultra Librarian 3D Model Ultra Librarian RJK5030DPD-03#J2 CAD Model

Description

The Renesas RJK5030DPD-03#J2 is an N-Channel MOSFET that belongs to the category of discrete semiconductor products.

  • Type: N-Channel MOSFET
  • Category: Discrete semiconductor products
  • RoHS: Non-compliant
  • Status: Obsolete
  • Win Source Part Number: 1088478-RJK5030DPD-03#J2
  • Alternative Parts (Cross-Reference): Not listed
  • Drain to Source Voltage (Vdss): 500V
  • Continuous Drain (Id): 5A (Ta)
  • Rds On (Max) @ Id, Vgs: 1.6Ohm @ 2A, 10V
  • Vgs(th) (Max) @ Id: 4.5V @ 1mA
  • Power Dissipation (Max): 41.7W (Tc)

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