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Same model may have multiple batches, images only for reference.
RJH60F4DPK-00#T0 Renesas Electronics America
Same model may have multiple batches, images only for reference.

RJH60F4DPK-00#T0

Part No RJH60F4DPK-00#T0
Manufacturer Renesas Electronics America
Catalog IGBTs - Single
Description IGBT 600V 60A 235.8W TO-3P
Datasheet
RJH60F4DPK-00#T0 Datasheet
Sample
Rohs State rohs
ECAD Module
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Products specifications Report Issue?

Categories Discrete Semiconductor Products
Manufacturer Renesas Electronics America
Packaging Tube/Rail
Status Active
IGBT Type Trench
VCEO Maximum Collector-Emitter Breakdown Voltage 600V
Maximum Current Collector 60A
Collector-emitter saturation voltage(Max) 1.82V @ 15V, 30A
Maximum Power Dissipation 235.8W
Input Type Standard
Turn-on and Turn-off delay time 45ns/85ns
Testing Conditions 400V, 30A, 5 Ohm, 15V
Reverse Recovery Time (trr) 140ns
Temperature Range - Operating 150°C (TJ)
Mounting Through Hole
Case / Package TO-3P
Win Source Part Number 1092262-RJH60F4DPK-00#T0
Popularity Medium
Supply and Demand Status Balance
Ultra Librarian 3D Model Ultra Librarian RJH60F4DPK-00#T0 CAD Model

Description

The Renesas Electronics America IGBT is a trench type transistor suitable for use in various electronic devices.

  • Manufacturer: Renesas Electronics America
  • Maximum Collector-Emitter Breakdown Voltage: 600V
  • Maximum Collector Current: 60A
  • Package: TO-3P
  • Maximum Power Dissipation: 235.8W
  • Collector-Emitter Saturation Voltage (Max): 1.82V @ 15V, 30A
  • Turn-On Delay Time: 45ns
  • Turn-Off Delay Time: 85ns
  • Testing Conditions: 400V, 30A, 5 Ohm, 15V

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