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RJH60D1DPP-M0#T2

Name: RJH60D1DPP-M0#T2
Brand: Renesas Electronics America
SKU: 295112
Availability: InStock
Rating: 4.85 (5 reviews)

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Part No	RJH60D1DPP-M0#T2
Manufacturer	Renesas Electronics America
Catalog	IGBTs - Single
Description	IGBT 600V 20A 20.8W TO220FL
Datasheet	RJH60D1DPP-M0#T2 Datasheet
Sample
Rohs State
ECAD Module
	Add to BOM List New List Existing List This product has been added to your list. List name
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Products specifications Report Issue?

Categories	Discrete Semiconductor Products
Manufacturer	Renesas Electronics America
Packaging	Tube/Rail
Status	Active
IGBT Type	Trench
VCEO Maximum Collector-Emitter Breakdown Voltage	600V
Maximum Current Collector	20A
Collector-emitter saturation voltage(Max)	2.5V @ 15V, 10A
Maximum Power Dissipation	30W
Total Switching Energy(Ets)	100μJ (on), 130μJ (off)
Input Type	Standard
Gate Charge	13nC
Turn-on and Turn-off delay time	30ns/42ns
Testing Conditions	300V, 10A, 5 Ohm, 15V
Reverse Recovery Time (trr)	70ns
Temperature Range - Operating	150°C (TJ)
Mounting	Through Hole
Case / Package	TO-220FL
Win Source Part Number	062525-RJH60D1DPP-M0#T2
Popularity	Medium
Supply and Demand Status	Limited
Ultra Librarian 3D Model	Ultra Librarian RJH60D1DPP-M0#T2 CAD Model

Alternative Products

Description

The RJH60D1DPP-M0#T2 is an active, through-hole IGBT semiconductor device from Renesas Electronics America.

Designed for: Use in a range of electronic devices and equipment and is suitable for high power and voltage applications.
Maximum collector-emitter breakdown voltage: 600V
Maximum power dissipation: 30W
Total switching energy (on): 100μJ
Total switching energy (off): 130μJ
Turn-on delay time: 30ns
Turn-off delay time: 42ns

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Pricing & Ordering

Quantity	Unit Price	Ext. Price
90+	$0.6468	$58.2120
220+	$0.5313	$116.8860
340+	$0.5140	$174.7600
465+	$0.4978	$231.4770
600+	$0.4816	$288.9600
805+	$0.4320	$347.7600

* Prices exclude shipping and taxes. Shipping costs are calculated at checkout.

Availability: 57,000 pieces

MOQ: 90 pcs

Order Increment : 1 pcs

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