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Same model may have multiple batches, images only for reference.
RJH60D0DPM-00#T1
Same model may have multiple batches, images only for reference.

RJH60D0DPM-00#T1

Part No RJH60D0DPM-00#T1
Manufacturer Renesas Electronics America
Catalog IGBTs - Single
Description IGBT 600V 45A 40W TO3PFM / IGBT Trench 600 V 45 A 40 W Through Hole TO-3PFM
Sample
Rohs State rohs
ECAD Module
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Products specifications Report Issue?

Category Discrete Semiconductor Products>Transistors - IGBTs - Single
Mfr Renesas Electronics America Inc
Package Tube
IGBT Type Trench
Voltage - Collector Emitter Breakdown (Max) 600 V
Current - Collector (Ic) (Max) 45 A
Vce(on) (Max) @ Vge, Ic 2.2V @ 15V, 22A
Power - Max 40 W
Switching Energy 230µJ (on), 290µJ (off)
Input Type Standard
Gate Charge 46 nC
Td (on/off) @ 25°C 40ns/80ns
Test Condition 300V, 22A, 5Ohm, 15V
Reverse Recovery Time (trr) 100 ns
Temperature Range - Operating 150°C (TJ)
Mounting Type Through Hole
Package / Case TO-220-3 Full Pack
Supplier Device Package TO-3PFM
Base Product Number RJH60D0
MSL Level 1 (Unlimited)
REACH Status REACH Unaffected
ECCN EAR99
HTSUS 8541.29.0095
Standard Package 1
Win Source Part Number 974565-RJH60D0DPM-00#T1
Ultra Librarian 3D Model Ultra Librarian RJH60D0DPM-00#T1 CAD Model

Description

The Renesas RJH60D0DPM-00#T1 is a single IGBT (insulated-gate bipolar transistor) with a maximum power of 40W and a collector-emitter breakdown voltage of 600V.

  • Power - Max: 40W
  • Voltage - Collector Emitter Breakdown (Max): 600V
  • Mounting Type: Through Hole
  • Package / Case: TO-220-3 Full Pack
  • Reverse Recovery Time (trr): 100ns
  • IGBT Type: Trench
  • Current - Collector (Ic) (Max): 45A
  • Vce(on) (Max) @ Vge, Ic: 2.2V @ 15V, 22A
  • Switching Energy: 230μJ (on), 290μJ (off)
  • Input Type: Standard
  • Gate Charge: 46nC
  • Td (on/off) @ 25°C: 40ns/80ns
  • Test Condition: 300V, 22A, 5Ohm, 15V
  • Operating Temperature: 150°C (TJ)
  • ECCN: EAR99

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