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RJH30E3DPK-M2-T2

Part No RJH30E3DPK-M2-T2
Manufacturer Renesas Electronics America
Catalog Electronic Wholesale
Sample
Rohs State rohs
ECAD Module
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Reference Date Code 11+
Reference case TO-3P
Manufacturer Renesas Electronics America
Manufacturer Homepage www.renesas.com
Win Source Part Number 756026-RJH30E3DPK-M2-T2
Popularity Low
Supply and Demand Status Limited
Ultra Librarian 3D Model Ultra Librarian RJH30E3DPK-M2-T2 CAD Model

Description

The RJH30E3DPK-M2-T2 is an N-channel IGBT (Insulated Gate Bipolar Transistor) from Renesas Electronics America. It's designed for high-speed switching applications and offers excellent performance in terms of low saturation voltage and fast switching speeds.

Applications

  • Inverter Welding Machines: Used as a switching device in the inverter stage to control the welding current.
  • Uninterruptible Power Supplies (UPS): Used in the inverter section to convert DC power from the battery to AC power.
  • Power Factor Correction (PFC) Circuits: Improves the power factor of electronic devices by reducing harmonic distortion.
  • Induction Heating: Provides high-frequency power for heating metals and other materials.
  • Motor Control: Used in variable frequency drives (VFDs) to control the speed and torque of electric motors.

Features

  • N-Channel IGBT: Offers efficient switching and low on-state resistance.
  • High-Speed Switching: Designed for fast switching speeds, reducing switching losses.
  • Low Saturation Voltage: Low VCE(sat) minimizes power dissipation and improves efficiency.
  • Built-in Diode: Integrated diode provides reverse voltage protection.
  • TO-220 Package: Standard TO-220 package for easy mounting and heat dissipation.

Benefits

  • High Efficiency: Low saturation voltage and fast switching speeds contribute to high overall efficiency.
  • Reduced Power Dissipation: Low on-state resistance minimizes power dissipation, reducing heat generation.
  • Improved System Performance: Fast switching speeds enable higher frequency operation and improved system performance.
  • Simplified Design: Integrated diode simplifies circuit design and reduces the number of components.
  • Reliable Operation: Robust design ensures reliable operation in demanding applications.

Additional Details

The RJH30E3DPK-M2-T2 typically features a voltage rating of 330V and a continuous collector current rating of around 30A. Refer to the Renesas datasheet for complete specifications, including switching times, gate charge, and thermal resistance. Proper heat sinking is essential to ensure reliable operation at high currents.

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