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Same model may have multiple batches, images only for reference.
R1EV58256BTDRBI#B2
Same model may have multiple batches, images only for reference.

R1EV58256BTDRBI#B2

Part No R1EV58256BTDRBI#B2
Manufacturer Renesas Electronics America
Catalog Memory
Description IC EEPROM 256KBIT PAR 32TSOP I / EEPROM Memory IC 256Kbit Parallel 85 ns 32-TSOP I
Sample
Rohs State rohs
ECAD Module
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Products specifications Report Issue?

Category Integrated Circuits (ICs) - Memory - Memory
Mfr Renesas Electronics America Inc
Series R1EV58256BxxR
Package Tray
Product Status Obsolete
Memory Type Non-Volatile
Memory Format EEPROM
Technology EEPROM
Memory Size 256Kbit
Memory Organization 32K x 8
Memory Interface Parallel
Write Cycle Time - Word, Page 10ms
Access Time 85 ns
Voltage - Supply 2.7V ~ 5.5V
Temperature Range - Operating -40°C ~ 85°C (TA)
Mounting Type Surface Mount
Package / Case 32-TFSOP (0.488", 12.40mm Width)
Supplier Device Package 32-TSOP I
Base Product Number R1EV58256
Standard Package 60
MSL Level 3 (168 Hours)
ECCN EAR99
HTSUS 8542.32.0051
Win Source Part Number 1340260-R1EV58256BTDRBI#B2
Ultra Librarian 3D Model Ultra Librarian R1EV58256BTDRBI#B2 CAD Model

Description

The Renesas Electronics America Inc. R1EV58256BTDRBI#B2 is a memory integrated circuit (IC) from Renesas Electronics America Inc.

  • Series: R1EV58256BxxR
  • Memory Size: 256Kbit
  • Memory Type: EEPROM
  • Voltage Supply: 2.7V to 5.5V
  • Package: 32-TFSOP
  • Temperature Range: -40°C to 85°C
  • Write Cycle Time: 10ms
  • Applications: Automotive, Industrial, and Consumer

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