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NE85639-T1-A

Name: NE85639-T1-A
Brand: Renesas Electronics America
SKU: 1082004
Availability: InStock
Rating: 4.93 (5 reviews)

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Part No	NE85639-T1-A
Manufacturer	Renesas Electronics America
Catalog	RF Transistors (BJT)
Description	SAME AS 2SC4093 NPN SILICON AMPL / RF Transistor NPN 12V 100mA 7GHz 200mW Surface Mount SOT-143
Sample
Rohs State
ECAD Module
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Category	Discrete Semiconductor Products>Transistors - Bipolar (BJT) - RF
Mfr	Renesas
Package	Tape & Reel (TR)
Product Status	Last Time Buy
Transistor Type	NPN
Voltage - Collector Emitter Breakdown (Max)	12V
Frequency - Transition	7GHz
Noise Figure (dB Typ @ f)	1.1dB @ 1GHz
Gain	13dB
Power - Max	200mW
DC Current Gain (hFE) (Min) @ Ic, Vce	50 @ 20mA, 10V
Current - Collector (Ic) (Max)	100mA
Temperature Range - Operating	150°C (TJ)
Mounting	SMD (SMT)
Package / Case	TO-253-4, TO-253AA
Supplier Device Package	SOT-143
MSL Level	1 (Unlimited)
REACH Status	REACH Unaffected
ECCN	EAR99
HTSUS	8542.31.0000
Other Names	3923-NE85639-T1-ATR
Standard Package	3,000
Win Source Part Number	1082004-NE85639-T1-A
Ultra Librarian 3D Model	Ultra Librarian NE85639-T1-A CAD Model

Alternative Products

Description

The Renesas NE85639-T1-A is a bipolar transistor with a power of 200mW and a voltage collector emitter breakdown of 12V.

Transistor Type: Bipolar
Power: 200mW
Voltage Collector Emitter Breakdown: 12V
Current Collector: 100mA
Gain: 13dB
Type: NPN
DC current gain (hFE): 50 @ 20mA, 10V
Frequency transition: 7GHz
Noise figure: 1.1dB @ 1GHz
Package: Tape & reel (TR)
Standard Package: 3,000
Mounting: Surface mount technology (SMT)
Package/Case: TO-253-4, TO-253AA
ECCN: EAR99
Category: Discrete semiconductor products
REACH Status: Unaffected
HTSUS: 8542.31.0000
Alternative part number: NE85639-T1-ANE85639T1A

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NE85639-T1-A

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