The Renesas HAT2256R-EL is a P-channel Power MOSFET designed for switching and power amplification applications. It is part of Renesas's family of power semiconductor devices.

Applications

• DC-DC Converters
• Power Management Systems
• Motor Control Circuits
• Load Switching
• High-Side Switching

Features

• P-Channel MOSFET
• Low On-Resistance (RDS(on))
• High-Speed Switching
• Logic Level Drive
• Surface Mount Package
• Lead-Free Construction

Benefits

• High Efficiency due to low RDS(on)
• Reduced Switching Losses
• Simplified Gate Drive Circuitry
• Direct Logic Level Interface
• Compact Design for space-constrained applications
• Environmentally Friendly

Technical Specifications

The HAT2256R-EL typically features a low on-resistance (RDS(on)) ranging from 20 to 40 mOhms at a gate-source voltage (VGS) of -4.5V. It has a drain-source voltage (VDS) rating of -30V. The continuous drain current (ID) is around -7A to -10A. It features fast switching speeds and a low gate charge (Qg). It is typically available in a small surface mount package such as SOP-8 or similar. Specific RDS(on) values, voltage ratings, and thermal resistance information are available in the official Renesas datasheet.