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71V65703S75PFGI Real Image1 71V65703S75PFGI Real Image2
Same model may have multiple batches, images only for reference.
71V65703S75PFGI Real Image1 71V65703S75PFGI Real Image2
71V65703S75PFGI Real Image1 71V65703S75PFGI Real Image2
Same model may have multiple batches, images only for reference.

71V65703S75PFGI

Part No 71V65703S75PFGI
Manufacturer Renesas Electronics America
Catalog Memory
Description IC SRAM 9MBIT PARALLEL 100TQFP / SRAM - Synchronous, SDR (ZBT) Memory IC 9Mbit Parallel 7.5 ns 100-TQFP (14x14)
Sample
Rohs State rohs
ECAD Module
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Products specifications Report Issue?

Category Integrated Circuits (ICs)>Memory>Memory
Mfr Renesas Electronics America
Series -
Package Tray
Memory Type Volatile
Memory Format SRAM
Technology SRAM - Synchronous, SDR (ZBT)
Memory Size 9Mbit
Memory Organization 256K x 36
Memory Interface Parallel
Write Cycle Time - Word, Page -
Access Time 7.5 ns
Voltage - Supply 3.135V ~ 3.465V
Temperature Range - Operating -40°C ~ 85°C (TA)
Mounting Type Surface Mount
Package / Case 100-LQFP
Supplier Device Package 100-TQFP (14x14)
Base Product Number 71V65703
Moisture Sensitivity Level (MSL) 3 (168 Hours)
REACH Status REACH Unaffected
ECCN 3A991B2A
HTSUS 8542.32.0041
Standard Package 72 pcs
Win Source Part Number 1381055-71V65703S75PFGI
Ultra Librarian 3D Model Ultra Librarian 71V65703S75PFGI CAD Model

Description

The 1381055-71V65703S75PFGI is a 9Mbit SRAM memory with a synchronous, SDR (ZBT) technology and is manufactured by Renesas Electronics America.

  • Memory Technology: Synchronous, SDR (ZBT)
  • Access Time: 7.5 ns
  • Voltage Supply: 3.135V to 3.465V
  • Memory Organization: 256K x 36
  • Memory Interface: Parallel
  • Package: 100-LQFP
  • Operating Temperature: -40°C to 85°C
  • Memory Type: Volatile
  • Memory Format: SRAM
  • Moisture Sensitivity Level (MSL): 3 (up to 168 hours of exposure to moisture)

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