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71V65603S133PFGI8

Part No 71V65603S133PFGI8
Manufacturer Renesas Electronics America
Catalog Memory
Description IC SRAM 9MBIT PARALLEL 100TQFP / SRAM - Synchronous, SDR (ZBT) Memory IC 9Mbit Parallel 133 MHz 4.2 ns 100-TQFP (14x14)
Datasheet
Sample
Rohs State rohs
ECAD Module
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Products specifications Report Issue?

Category Integrated Circuits (ICs)>Memory>Memory
Mfr Renesas Electronics America
Series -
Package Tape & Reel (TR)
Memory Type Volatile
Memory Format SRAM
Technology SRAM - Synchronous, SDR (ZBT)
Memory Size 9Mbit
Memory Organization 256K x 36
Memory Interface Parallel
Clock Frequency 133 MHz
Write Cycle Time - Word, Page -
Access Time 4.2 ns
Voltage - Supply 3.135V ~ 3.465V
Temperature Range - Operating -40°C ~ 85°C (TA)
Mounting Type Surface Mount
Package / Case 100-LQFP
Supplier Device Package 100-TQFP (14x14)
Base Product Number 71V65603
Moisture Sensitivity Level (MSL) 3 (168 Hours)
REACH Status REACH Unaffected
ECCN 3A991B2A
HTSUS 8542.32.0041
Standard Package 1,000 pcs
Win Source Part Number 1381054-71V65603S133PFGI8
Ultra Librarian 3D Model Ultra Librarian 71V65603S133PFGI8 CAD Model

Description

The 1381054-71V65603S133PFGI8 is a 9Mbit SRAM (Synchronous, SDR - ZBT) memory part of the Renesas Electronics America product line.

  • Memory Type: SRAM (Synchronous, SDR - ZBT)
  • Memory Size: 9Mbit
  • Voltage Supply: 3.135V to 3.465V
  • Mounting Type: Surface Mount
  • Package: 100-LQFP
  • Clock Frequency: 133 MHz
  • Access Time: 4.2 ns
  • Memory Organization: 256K x 36
  • Memory Type: Volatile
  • REACH Regulations: Not affected
  • Operating Temperature: -40°C to 85°C
  • Moisture Sensitivity Level: 3 (up to 168 hours of exposure to moisture)

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