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2SK3113B-ZK-E1-AY

Part No 2SK3113B-ZK-E1-AY
Manufacturer Renesas Electronics America
Catalog JFETs (Junction Field Effect)
Description MOS FIELD EFFECT TRANSISTOR / Trans MOSFET N-CH 600V 2A 3-Pin(2+Tab) DPAK T/R
Sample
Rohs State rohs
ECAD Module
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Category Discrete Semiconductor Products
Family JFETs(Junction Field Effect)
Manufacturer Renesas Electronics America
Win Source Part Number 159824-2SK3113B-ZK-E1-AY
Popularity Medium
Supply and Demand Status Balance
Family Name 2SK3113B
Introduction Date February 01, 2001
ECCN EAR99
Estimated EOL Date Obsolete / End of life
Ultra Librarian 3D Model Ultra Librarian 2SK3113B-ZK-E1-AY CAD Model

Description

Overview of 2SK3113B-ZK-E1-AY

The 2SK3113B-ZK-E1-AY is a high-performance N-channel MOSFET designed for a wide range of applications. This semiconductor device is favored for its reliability and efficiency in handling high-power applications. As a transistor, the 2SK3113B-ZK-E1-AY plays a crucial role in electronic circuit designs by regulating voltage and current flow.

Applications and Projects

  • Switching Regulators: Ideal for use in power management circuits where efficient and reliable switching is crucial.
  • DC-DC Converters: Suitable for applications requiring fast switching and high power conversion efficiency.
  • Motor Drives: Used in controlling the operation of electric motors in various consumer electronics and automotive applications.
  • Power Amplifiers: Useful in enhancing the output signal strength in audio devices.

Features and Benefits

  • Low On-State Resistance: The 2SK3113B-ZK-E1-AY is designed to minimize power loss and improve efficiency by keeping the on-state resistance low.
  • Fast Switching Speed: Offers faster transition times between on and off states, essential for applications requiring quick responsiveness.
  • High Power Capability: Capable of handling high voltages and currents essential for power-intensive applications.
  • Thermal Stability: Exhibits excellent heat dissipation, allowing it to function effectively under varying thermal conditions.

Additional Details

The 2SK3113B-ZK-E1-AY is engineered to offer robust performance in power electronics. The advanced silicon technology utilized ensures minimal leakage current and high avalanche energy capability. This makes it suitable not only for industrial applications but also for consumer electronics where high-efficiency power conversion is required. Furthermore, it features encapsulation designed to provide enhanced mechanical protection and insulation, ensuring long-term reliability and durability in diverse environments.

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Pricing & Ordering

Quantity Unit Price Ext. Price
45+ $1.4357 $64.6065
100+ $1.1781 $117.8100
155+ $1.1411 $176.8705
210+ $1.1042 $231.8820
275+ $1.0672 $293.4800
365+ $0.9575 $349.4875
* Prices exclude shipping and taxes. Shipping costs are calculated at checkout.
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Availability: 2,100 pieces
MOQ: 45 pcs
Order Increment : 1 pcs
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Shipping Information

Shipped from HK warehouse
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