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2SJ529STR-E

Part No 2SJ529STR-E
Manufacturer Renesas Electronics America
Catalog JFETs (Junction Field Effect)
Description Trans MOSFET P-CH 60V 10A 3-Pin(2+Tab) DPAK(S) T/R
Sample
Rohs State rohs
ECAD Module
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Category Discrete Semiconductor Products
Family JFETs(Junction Field Effect)
Manufacturer Renesas Electronics America
Win Source Part Number 158712-2SJ529STR-E
Popularity Low
Supply and Demand Status Balance
Family Name 2SJ529STR-E
Introduction Date January 01, 2000
ECCN EAR99
Estimated EOL Date 2023
Ultra Librarian 3D Model Ultra Librarian 2SJ529STR-E CAD Model

Description

The 2SJ529STR-E is a P-channel MOSFET known for its robust performance in electronic applications where power efficiency and reliability are paramount. This component offers a range of features that make it widely applicable across various industries.

Features and Benefits

  • Enhanced Power Handling: Capable of managing high power loads, it's ideal for demanding applications requiring substantial current throughput.
  • Efficient Switching: Designed with low on-resistance, it minimizes energy loss, promoting energy-efficient operations.
  • Temperature Resilience: Its ability to maintain stability under varying thermal conditions ensures dependable performance.
  • Space-Efficient Design: The compact packaging ensures it fits in tight spaces, suitable for modern compact devices.

Applications

  • Power Inverters
  • Telecommunications Equipment
  • Portable Electronics
  • Smart Home Devices

The 2SJ529STR-E MOSFET excels in high-efficiency applications like power converters and battery management systems, where reducing power consumption is crucial.

This component's P-channel design allows for efficient high-side load switching, making it an excellent choice for engineers focused on creating power-efficient solutions.

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